MVB50P03HDL: Power MOSFET -30V, -50A, 25 mOhm, Single P-Channel, D2PAK, Logic Level.
Automotive Power MOSFET designed to withstand high energy in the avalanche and commutation modes. The energy efficient design also offers a drain-to-source diode with a fast recovery time. Designed for low voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients. AEC-Q101 Qualified MOSFET and PPAP capable suitable for automotive applications.
特性- Avalanche Energy Specified
- Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode
- Diode is Characterized for Use in Bridge Circuits
- IDSS and VDS(on) Specified at Elevated Temperature
- Short Heatsink Tab Manufactured Not Sheared
- Specially Designed Leadframe for Maximum Power Dissipation
- Pb-Free Packages are Available
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封装
仿真模型 (5)
封装图纸 (1)
| Document Title | Document ID/Size | Revision |
|---|
| D2PAK 2 LEAD | 418B-04 (35.3kB) | L |
数据表 (1)
产品订购型号
| 产品 | 状况 | Compliance | 封装 | MSL* | 容器 | 预算价格 (1千个数量的单价） |
|---|
| MVB50P03HDLT4G | Active | AEC Qualified
PPAP Capable
Pb-free
Halide free | D2PAK-3 | 418B-04 | 1 | Tape and Reel | 800 | $2.0 |
订购产品技术参数
| Product | Channel Polarity | Configuration | V(BR)DSS Min (V) | VGS Max (V) | VGS(th) Max (V) | ID Max (A) | PD Max (W) | RDS(on) Max @ VGS = 2.5 V (mΩ) | RDS(on) Max @ VGS = 4.5 V (mΩ) | RDS(on) Max @ VGS = 10 V (mΩ) | Qg Typ @ VGS = 4.5 V (nC) | Qg Typ @ VGS = 10 V (nC) | Qgd Typ @ VGS = 4.5 V (nC) | Qrr Typ (nC) | Ciss Typ (pF) | Coss Typ (pF) | Crss Typ (pF) |
|---|
| MVB50P03HDLT4G | P-Channel | Single | 30 | 15 | 2 | 50 | 125 | | 25 | | 74 | | | 246 | 3500 | 1500 | 550 |
