N64S818HA: Serial SRAM Memory, 64-kb, 1.8 V
The ON Semiconductor serial SRAM family includes several integrated memory devices including this 64 k serially accessed Static Random Access Memory, internally organized as 8 k words by 8 bits. The devices are designed and fabricated using advanced CMOS technology to provide both high-speed performance and low power. The devices operate with a single chip select (CS) input and use a simple Serial Peripheral Interface (SPI) serial bus. A single data in and data out line is used along with a clock to access data within the devices. The N64S818HA devices include a HOLD pin that allows communication to the device to be paused. While paused, input transitions will be ignored. The devices can operate over a wide temperature range of -40°C to +85°C and can be available in several standard package offerings.
特性- 1.7 to 1.95 V power supply range
- Very low standby current - as low as 200 nA
- Very low operating current - as low as 3 mA
- Simple memory control: single chip select (CS), serial input (SI) and serial output (SO)
- Flexible operating modes: word read and write, page mode (32 word page), and burst mode (full array)
- 8 K x 8 bit organization
- Self timed write cycles
- Built-in write protection (CS high)
- HOLD pin for pausing communication
- High reliability - unlimited write cycles
- RoHS Compliant Packages - Green SOIC and TSSOP
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应用注释 (1)
数据表 (1)
辅助小册子 (1)
封装图纸 (2)
产品订购型号
| 产品 | 状况 | Compliance | 封装 | MSL* | 容器 | 预算价格 (1千个数量的单价） |
|---|
| N64S818HAS21I | Active | Pb-free
Halide free | SOIC-8 | 751AZ | 3 | Tube | 100 | 联系BDTIC |
| N64S818HAT21I | Active | Pb-free
Halide free | TSSOP-8 | 948S-01 | 3 | Tube | 100 | 联系BDTIC |
订购产品技术参数
| Product | Type | Density | Organization (bits) | fcycle Max (MHz) | VCC Min (V) | VCC Max (V) | Istandby Typ (µA) |
|---|
| N64S818HAS21I | Serial | 64 kb | 8k x 8 | 16 | 1.7 | 1.95 | 1 |
| N64S818HAT21I | Serial | 64 kb | 8k x 8 | 16 | 1.7 | 1.95 | 1 |
