NCP5181: MOSFET / IGBT Drivers, High Voltage, High and Low Side, Dual Input
The NCP5181 is a High Voltage Power Mosfet Driver providing two outputs for direct drive of a 2 N-channel power Mosfets arranged in a half-bridge (or any other high side + low side configuration).It uses the bootstrap technique to insure a proper drive of the High side power switch. The driver works with 2 independent inputs to accomodate any topology (including half-bridge, asymmetrical half-bridge, active clamp and full bridge).
特性- High Voltage Range: up to 600 V
- dV/dt Immunity 50 V/nsec
- Gate Drive Supply Range from 10 V to 20 V
- High and Low DRV Outputs
- Output Source / Sink Current Capability 1.1 A / 2.4 A
- 3.3 V and 5 V Input Logic Compatible
- Up to Vcc Swing on Input Pins
- Matched Propagation Delays between Both Channels
- Outputs in Phase with the Inputs
- Independent Logic Inputs to Accommodate All Topologies
- Under VCC LockOut (UVLO) for Both Channels
- Pin to Pin Compatible with IR2181(S)
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应用- Bridge Inverter for UPS systems
- High Power Energy Management
- Half-bridge Power Converters
- Full-bridge Converters
- Any Complementary Drive Converters (asymmetrical halfbridge, active clamp)
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数据表 (1)
应用注释 (2)
封装图纸 (2)
仿真模型 (1)
评估板文档 (5)
评估板与开发工具
产品订购型号
| 产品 | 状况 | Compliance | 封装 | MSL* | 容器 | 预算价格 (1千个数量的单价） |
|---|
| NCP5181DR2G | Active | Pb-free
Halide free | SOIC-8 | 751-07 | 1 | Tape and Reel | 2500 | $0.7 |
| NCP5181PG | Active | Pb-free
Halide free | PDIP-8 | 626-05 | NA | Tube | 50 | $1.19 |
订购产品技术参数
| Product | Type | Number of Drivers | Vin Max (V) | VCC Max (V) | Drive Source/Sink Typ (mA) | Rise Time (ns) | Fall Time (ns) | tp Max (ns) |
|---|
| NCP5181DR2G | MOSFET | 2 | 600 | 20 | 1400 / 2200 | 40 | 40 | 170 |
| NCP5181PG | MOSFET | 2 | 600 | 20 | 1400 / 2200 | 20 | 20 | 170 |
