NDF02N60Z: Power MOSFET 600V 2.4A 4.8 Ohm Single N-Channel TO-220FP

Power MOSFET 600V 4.8 Ohm Single N-Channel

特性
  • Low ON Resistance
  • Low Gate Charge
  • ESD diode-protected gate
  • 100% Avalanche Tested
  • This Device is Pb-Free, Halogen Free/BFR Free and RoHS Compliant
优势
  • Improves efficiency
  • Faster turn-on
  • ESD resistance
应用
  • Adapter (Notebook, Printer, Gaming) LCD Panel Power Lighting Ballasts
终端产品
  • SMPS Lighting Ballast
仿真模型 (4)
Document TitleDocument ID/SizeRevisionRevision Date
NDF02N60Z PSpice ModelNDF02N60Z.LIB (1.0kB)0
NDF02N60Z Saber ModelNDF02N60Z.SIN (1.0kB)0
NDF02N60Z Spice2 ModelNDF02N60Z.SP2 (1.0kB)0
NDF02N60Z Spice3 ModelNDF02N60Z.SP3 (1.0kB)0
封装图纸 (1)
Document TitleDocument ID/SizeRevision
TO-220 FULLPACK, 3-LEAD221AH (34.8kB)F
数据表 (1)
Document TitleDocument ID/SizeRevisionRevision Date
Power MOSFET 600V 4.8 Ohm Single N-ChannelNDF02N60Z/D (142kB)8Jan, 2015
产品订购型号
产品状况Compliance具体说明封装MSL*容器预算价格 (1千个数量的单价)
NDF02N60ZGActive, Not RecPb-free Halide freePower MOSFET 600V 2.4A 4.8 Ohm Single N-Channel TO-220FPTO-220 FULLPAK-3221AHNATube50$0.2733
NDF02N60ZHActivePb-free Halide freePower MOSFET 600V 2.4A 4.8 Ohm Single N-Channel TO-220FP, OptimizedTO-220 FULLPAK-3221AHNATube50$0.2733
订购产品技术参数
ProductChannel PolarityConfigurationV(BR)DSS Min (V)VGS Max (V)VGS(th) Max (V)ID Max (A)PD Max (W)rDS(on) Max @ VGS = 2.5 V (mΩ)rDS(on) Max @ VGS = 4.5 V (mΩ)rDS(on) Max @ VGS = 10 V (mΩ)Qg Typ @ VGS = 4.5 V (nC)Qg Typ @ VGS = 10 V (nC)Qgd Typ @ VGS = 4.5 V (nC)Qrr Typ (nC)Ciss Typ (pF)Coss Typ (pF)Crss Typ (pF)
NDF02N60ZHN-ChannelSingle600304.52.4244800105.30.7274347
Power MOSFET 600V 4.8 Ohm Single N-Channel (142kB) NDD02N60Z
NDF02N60Z PSpice Model NDF02N60Z
NDF02N60Z Saber Model NDF02N60Z
NDF02N60Z Spice2 Model NDF02N60Z
NDF02N60Z Spice3 Model NDF02N60Z
TO-220 FULLPACK, 3-LEAD NDF11N50Z