NGB8245: IGBT, N-Channel, 20 A, 450 V
This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry intergrating ESD and Over-Voltage clamped protection for use in inductive coil drivers applications. Primary uses include Ignition, Direct Fuel Injection, or whatever high voltage and high current switching is required.
特性- Ideal for Coil-on-Plug and Driver-on-Coil Applications.
- Gate-Emitter ESD Protection
- Temperature Compensated Gate-Collector Voltage Clamp Limits Stress Applied to Load.
- Intergrated ESD Diode Protection
- Low Threshhold Voltage for Interfacing Power Loads to Logic or Microprocessor Devices
- Low Saturation Voltage
- High Pulsed Current Capabilty
- Optional Gate Resistor (RG and Gate-Emitter Resistor (RGE)
|
应用- Ignition Systems
Direct Fuel Injection
| 终端产品 |
数据表 (1)
封装图纸 (1)
| Document Title | Document ID/Size | Revision |
|---|
| D2PAK 2 LEAD | 418B-04 (35.3kB) | L |
产品订购型号
| 产品 | 状况 | Compliance | 具体说明 | 封装 | MSL* | 容器 | 预算价格 (1千个数量的单价） |
|---|
| NGB8245NT4G | Active | AEC Qualified
PPAP Capable
Pb-free
Halide free | IGBT, N-Channel, 20 A, 450 V | D2PAK-3 | 418B-04 | 2 | Tape and Reel | 800 | $0.8 |
订购产品技术参数
| Product | V(BR)CES Typ (V) | IC Max (A) | VCE(sat) Typ (V) | VF Typ (V) | Eoff Typ (mJ) | Eon Typ (mJ) | Trr Typ (ns) | Irr Typ (A) | Gate Charge Typ (nC) | Short Circuit Withstand (us) | EAS Typ (mJ) | PD Max (W) | Co-Packaged Diode |
|---|
| NGB8245NT4G | 450 | 20 | 1.1 | | | | | | | | 158 | 150 | No |
