NGD18N45: Ignition IGBT 18A,450V
This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Over-Voltage clamped protection for use in inductive coil drivers applications. Primary uses include Ignition, Direct Fuel Injection, or wherever high voltage and high current switching is required.
特性- DPAK Package Offers Smaller Footprint and Increased Board Space
- Temperature Compensated Gate-Collector Voltage Clamp Limits Stress Applied to Load
- Integrated Gate-Emitter ESD Protection
- Low Threshold Voltage to Interface Power Loads to Logic-Level Microprocessor Devices
- Low Saturation Voltage
- High Pulsed Current Capability
- Emitter Ballasting for Short-Circuit Protection
- This is a Pb-Free Device
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数据表 (1)
封装图纸 (1)
产品订购型号
| 产品 | 状况 | Compliance | 具体说明 | 封装 | MSL* | 容器 | 预算价格 (1千个数量的单价） |
|---|
| NGD18N45CLBT4G | Active | AEC Qualified
PPAP Capable
Pb-free
Halide free | Ignition IGBT 18A,450V | DPAK-3 | 369C | 3 | Tape and Reel | 2500 | $0.6667 |
订购产品技术参数
| Product | V(BR)CES Typ (V) | IC Max (A) | VCE(sat) Typ (V) | VF Typ (V) | Eoff Typ (mJ) | Eon Typ (mJ) | Trr Typ (ns) | Irr Typ (A) | Gate Charge Typ (nC) | Short Circuit Withstand (us) | EAS Typ (mJ) | PD Max (W) | Co-Packaged Diode |
|---|
| NGD18N45CLBT4G | 450 | 18 | 2.07 | | | | | | | | 360 | 115 | No |
