NGTB15N60S1: IGBT/w Diode 600V 15A NPT
This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Non-Punch through (NPT) Trench construction, and provides superior performance in demanding switching applications. Offering both low on state voltage and minimal switching loss, the IGBT is well suited for motor drive control and other hard switching applications. Incorporated into the device is a rugged co-packaged reverse recovery diode with a low forward voltage.
特性- Low Saturation Voltage Resulting in Low Conduction Loss
- Low Switching Loss in Higher Frequency Applications
- Soft Fast Reverse Recovery Diode
- 5µs Short Circuit Capability
- Excellent Current versus Package Size Performance Density
- AC and DC Motor Control
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应用- Appliance Motor Control
- General Purpose Inverter
| 终端产品 |
应用注释 (1)
数据表 (1)
仿真模型 (1)
| Document Title | Document ID/Size | Revision | Revision Date |
|---|
| Spice Model | SPICE MODEL (31.0kB) | 0 | |
封装图纸 (1)
参考手册 (1)
产品订购型号
| 产品 | 状况 | Compliance | 封装 | MSL* | 容器 | 预算价格 (1千个数量的单价） |
|---|
| NGTB15N60S1EG | Active | Pb-free | TO-220-3 | 221A-09 | 1 | Tube | 50 | $0.45 |
订购产品技术参数
| Product | V(BR)CES Typ (V) | IC Max (A) | VCE(sat) Typ (V) | VF Typ (V) | Eoff Typ (mJ) | Eon Typ (mJ) | Trr Typ (ns) | Irr Typ (A) | Gate Charge Typ (nC) | Short Circuit Withstand (µs) | EAS Typ (mJ) | PD Max (W) | Co-Packaged Diode |
|---|
| NGTB15N60S1EG | 600 | 15 | 1.5 | 1.65 | 0.35 | 0.55 | 270 | 5 | 88 | 5 | | 117 | Yes |
