NGTB20N120IHS: IGBT 1200V 20A FS1 Induction Heating
This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on-state voltage and minimal switching loss. The IGBT is well suited for resonant or soft switching applications. Incorporated into the device is a rugged co-packaged free wheeling diode with a low forward voltage.
特性- Low Saturation Voltage using Trench with Fieldstop Technology
- Low Switching Loss
| 优势- Low Conduction Loss
- Reduces system Power Dissipation
|
应用- Induction Heating
Consumer Appliances
Soft Switching
| 终端产品- Rice Cooker
Induction Cooktop
|
培训教材 (1)
| Document Title | Document ID/Size | Revision | Revision Date |
|---|
| 用于电磁炉应用的IGBT | TND6026CN/D (12435.3kB) | 0 | Aug, 2012 |
数据表 (1)
应用注释 (2)
封装图纸 (1)
| Document Title | Document ID/Size | Revision |
|---|
| TO-247 | 340L-02 (57.4kB) | F |
参考手册 (1)
产品订购型号
| 产品 | 状况 | Compliance | 具体说明 | 封装 | MSL* | 容器 | 预算价格 (1千个数量的单价） |
|---|
| NGTB20N120IHSWG | Active | Pb-free
Halide free | IGBT 1200V 20A FS1 Induction Heating | TO-247-3 | 340L-02 | NA | Tube | 30 | $0.95 |
订购产品技术参数
| Product | V(BR)CES Typ (V) | IC Max (A) | VCE(sat) Typ (V) | VF Typ (V) | Eoff Typ (mJ) | Eon Typ (mJ) | Trr Typ (ns) | Irr Typ (A) | Gate Charge Typ (nC) | Short Circuit Withstand (us) | EAS Typ (mJ) | PD Max (W) | Co-Packaged Diode |
|---|
| NGTB20N120IHSWG | 1200 | 20 | 2.1 | 1.55 | 0.65 | | | | 155 | | | 156 | Yes |
