NGTB25N120FL: IGBT, 1200 V, 25 A, FS1 Solar/UPS
This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for UPS and solar applications. Incorporated into the device is a soft and fast co-packaged free wheeling diode with a low forward voltage.
特性- Low Saturation Voltage using Trench with Field Stop Technology
- Low Switching Loss
- 10µs Short Circuit Capability
- Soft, Fast Free Wheeling Diode
| 优势- Reduces System Power Dissipation
- Robust Circuit Performance
|
应用 | 终端产品- UPS System
Solar Inverter
|
应用注释 (1)
数据表 (1)
参考手册 (1)
封装图纸 (1)
| Document Title | Document ID/Size | Revision |
|---|
| TO-247 | 340L-02 (57.4kB) | F |
产品订购型号
| 产品 | 状况 | Compliance | 具体说明 | 封装 | MSL* | 容器 | 预算价格 (1千个数量的单价） |
|---|
| NGTB25N120FLWG | Active | Pb-free
Halide free | IGBT, 1200 V, 25 A, FS1 Solar/UPS | TO-247-3 | 340L-02 | NA | Tube | 30 | $1.82 |
订购产品技术参数
| Product | V(BR)CES Typ (V) | IC Max (A) | VCE(sat) Typ (V) | VF Typ (V) | Eoff Typ (mJ) | Eon Typ (mJ) | Trr Typ (ns) | Irr Typ (A) | Gate Charge Typ (nC) | Short Circuit Withstand (us) | EAS Typ (mJ) | PD Max (W) | Co-Packaged Diode |
|---|
| NGTB25N120FLWG | 1200 | 25 | 2 | 2.2 | 0.95 | 1.5 | 240 | 15 | 220 | 10 | | 231 | Yes |
