NGTB25N120L: IGBT 1200V 25A FS1 Gen Mkt
This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on-state voltage and minimal switching loss. The IGBT is well suited for resonant or soft switching applications. Incorporated into the device is a rugged co-packaged free wheeling diode with a low forward voltage.
特性- Low Saturation Voltage using Trench with Fieldstop Technology
- Low Switching Loss
| 优势- Low Conduction Loss
- Reduces system Power Dissipation
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应用 | 终端产品- Inverter Welding Machines
Microwave Ovens
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参考手册 (1)
封装图纸 (1)
| Document Title | Document ID/Size | Revision |
|---|
| TO-247 | 340L-02 (57.4kB) | F |
数据表 (1)
产品订购型号
| 产品 | 状况 | Compliance | 具体说明 | 封装 | MSL* | 容器 | 预算价格 (1千个数量的单价） |
|---|
| NGTB25N120LWG | Active | Pb-free | IGBT 1200V 25A FS1 Gen Mkt | TO-247-3 | 340L-02 | NA | Tube | 30 | $1.32 |
订购产品技术参数
| Product | V(BR)CES Typ (V) | IC Max (A) | VCE(sat) Typ (V) | VF Typ (V) | Eoff Typ (mJ) | Eon Typ (mJ) | Trr Typ (ns) | Irr Typ (A) | Gate Charge Typ (nC) | Short Circuit Withstand (us) | EAS Typ (mJ) | PD Max (W) | Co-Packaged Diode |
|---|
| NGTB25N120LWG | 1200 | 25 | 1.85 | 1.7 | 0.8 | 3.4 | | | 200 | 5 | | 192 | Yes |
