NGTB30N60IHLWG: IGBT, Field Stop (FS), 30 A, 600 V
This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in damanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for half bridge resonant applications. Incorporated into the device is a soft and fast co-packaged free wheeling diode with a low forward voltage.
特性- Low Saturation Voltage using Trench with Fieldstop Technology
- Low Switching Loss
| 优势- Low Conduction Loss
- Reduces System Power Dissipation
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培训教材 (1)
| Document Title | Document ID/Size | Revision | Revision Date |
|---|
| 用于电磁炉应用的IGBT | TND6026CN/D (12435.3kB) | 0 | Aug, 2012 |
数据表 (1)
应用注释 (2)
封装图纸 (1)
| Document Title | Document ID/Size | Revision |
|---|
| TO-247 | 340AL (32.3kB) | C |
参考手册 (1)
产品订购型号
| 产品 | 状况 | Compliance | 封装 | MSL* | 容器 | 预算价格 (1千个数量的单价） |
|---|
| NGTB30N60IHLWG | Active | Pb-free
Halide free | TO-247 | 340AL | NA | Tube | 30 | $1.62 |
订购产品技术参数
| Product | V(BR)CES Typ (V) | IC Max (A) | VCE(sat) Typ (V) | VF Typ (V) | Eoff Typ (mJ) | Eon Typ (mJ) | Trr Typ (ns) | Irr Typ (A) | Gate Charge Typ (nC) | Short Circuit Withstand (µs) | EAS Typ (mJ) | PD Max (W) | Co-Packaged Diode |
|---|
| NGTB30N60IHLWG | 600 | 30 | 1.8 | 1.2 | 0.28 | | 400 | 23 | 130 | | | 250 | Yes |
