NGTB50N60L2: IGBT 600V 50A FS2 Low VCEsat
This Insulated Gate Bipolar Transistor (IGBT) features a robust and
cost effective Field Stop (FS) Trench construction, and provides
superior performance in demanding switching applications, offering
both low on state voltage and minimal switching loss.
特性- Extremely Efficient Trench with Field Stop Technology
- TJmax = 175°C
- Soft Fast Reverse Recovery Diode
- Optimized for High Speed Switching
- 5 s Short−Circuit Capability
- These are Pb−Free Devices
|
应用- Motor Drive Inverters
- Industrial Switching
- Welding
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数据表 (1)
| Document Title | Document ID/Size | Revision | Revision Date |
|---|
| IGBT | NGTB50N60L2W/D (240kB) | 4 | Jul, 2015 |
封装图纸 (1)
| Document Title | Document ID/Size | Revision |
|---|
| TO-247 | 340AL (32.3kB) | C |
产品订购型号
| 产品 | 状况 | Compliance | 封装 | MSL* | 容器 | 预算价格 (1千个数量的单价） |
|---|
| NGTB50N60L2WG | Active | Pb-free
Halide free | TO-247 | 340AL | NA | Tube | 30 | $3.45 |
订购产品技术参数
| Product | V(BR)CES Typ (V) | IC Max (A) | VCE(sat) Typ (V) | VF Typ (V) | Eoff Typ (mJ) | Eon Typ (mJ) | Trr Typ (ns) | Irr Typ (A) | Gate Charge Typ (nC) | Short Circuit Withstand (µs) | EAS Typ (mJ) | PD Max (W) | Co-Packaged Diode |
|---|
| NGTB50N60L2WG | 600 | 50 | 1.5 | 1.7 | 0.6 | 0.8 | 67 | 7.4 | 310 | 5 | | 500 | Yes |
