NGTB60N60S: IGBT
This Insulated Gate Bipolar Transistor (IGBT) features a robust and
cost effective Field Stop (FS) Trench construction, and provides
superior performance in demanding switching applications, offering
both low on state voltage and minimal switching loss. The IGBT is
well suited for half bridge resonant applications. Incorporated into the
device is a soft and fast co−packaged free wheeling diode with a low
forward voltage.
特性- Low Saturation Voltage using Trench with Fieldstop Technology
- Low Switching Loss Reduces System Power Dissipation
- Low Gate Charge
- Soft, Fast Free Wheeling Diode
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数据表 (1)
| Document Title | Document ID/Size | Revision | Revision Date |
|---|
| IGBT | NGTB60N60SW/D (95kB) | 0 | Jul, 2014 |
封装图纸 (1)
| Document Title | Document ID/Size | Revision |
|---|
| TO-247 | 340L-02 (57.4kB) | F |
产品订购型号
| 产品 | 状况 | Compliance | 具体说明 | 封装 | MSL* | 容器 | 预算价格 (1千个数量的单价） |
|---|
| NGTB60N60SWG | Active | Pb-free
Halide free | IGBT | TO-247-3 | 340L-02 | NA | Tube | 30 | $3.1999 |
订购产品技术参数
| Product | V(BR)CES Typ (V) | IC Max (A) | VCE(sat) Typ (V) | VF Typ (V) | Eoff Typ (mJ) | Eon Typ (mJ) | Trr Typ (ns) | Irr Typ (A) | Gate Charge Typ (nC) | Short Circuit Withstand (us) | EAS Typ (mJ) | PD Max (W) | Co-Packaged Diode |
|---|
| NGTB60N60SWG | 600 | 60 | 2 | 1.98 | 0.6 | 1.41 | 76 | 7 | 173 | | | 298 | Yes |
