NGTG50N60FLWG: IGBT, PFC, High Frequency, 50 A, 600 V

This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss.

特性
  • Low Saturation Voltage using Trench with Field Stop Technology
  • Low Switching Loss Reduces System Power Dissipation
  • Optimized for High Speed Switching
  • 5µs Short Circuit Capability
优势
  • Reduces System Power Dissipation
应用
  • Solar Inverters
  • Uninterruptible Power Supplies(UPS)
应用注释 (1)
Document TitleDocument ID/SizeRevisionRevision Date
Paralleling of IGBTsAND9100/D (1251kB)1Mar, 2014
数据表 (1)
Document TitleDocument ID/SizeRevisionRevision Date
IGBTNGTG50N60FLW/D (164.0kB)0
参考手册 (1)
Document TitleDocument ID/SizeRevisionRevision Date
IGBT Applications HandbookHBD871/D (7014kB)3Apr, 2014
封装图纸 (1)
Document TitleDocument ID/SizeRevision
TO-247340L-02 (57.4kB)F
产品订购型号
产品状况Compliance封装MSL*容器预算价格 (1千个数量的单价)
NGTG50N60FLWGActivePb-free Halide freeTO-247-3340L-02NATube30$2.08
订购产品技术参数
ProductV(BR)CES Typ (V)IC Max (A)VCE(sat) Typ (V)VF Typ (V)Eoff Typ (mJ)Eon Typ (mJ)Trr Typ (ns)Irr Typ (A)Gate Charge Typ (nC)Short Circuit Withstand (µs)EAS Typ (mJ)PD Max (W)Co-Packaged Diode
NGTG50N60FLWG600501.650.61.13105223No
IGBT (164.0kB) NGTG50N60FLWG
Paralleling of IGBTs NGTG50N60FLWG
IGBT Applications Handbook NGTG50N60FWG
TO-247 NGTG50N60FWG