NJD2873: 2.0 A, 50 V NPN Bipolar Power Transistor
The Bipolar Power Transistor is designed for low voltage, low power, high gain amplifier applications.
特性- High DC Current Gain - hfe = 120(min)@Ic = 500 mA
- NJV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable
- These Devices are Pb-Free and are RoHS Compliant
|
应用- Ideal for high gain amplifier applications.
|
封装
仿真模型 (4)
封装图纸 (1)
数据表 (1)
产品订购型号
产品 | 状况 | Compliance | 封装 | MSL* | 容器 | 预算价格 (1千个数量的单价) |
---|
NJD2873T4G | Active | Pb-free
Halide free | DPAK-3 | 369C | 1 | Tape and Reel | 2500 | $0.2464 |
NJVNJD2873T4G | Active | AEC Qualified
PPAP Capable
Pb-free
Halide free | DPAK-3 | 369C | 1 | Tape and Reel | 2500 | $0.2711 |
NJD2873T4 | Last Shipments | | DPAK-3 | 369C | 1 | Tape and Reel | 2500 | |
订购产品技术参数
Product | Polarity | Type | VCE(sat) Max (V) | IC Continuous (A) | V(BR)CEO Min (V) | hFE Min | hFE Max | fT Min (MHz) | PTM Max (W) |
---|
NJD2873T4G | NPN | General Purpose | | 2 | 50 | 120 | 360 | 65 | 12.5 |
NJVNJD2873T4G | NPN | General Purpose | | 2 | 50 | 120 | 360 | 65 | 12.5 |