NSR01F30MX: 30 V, 100 mA Low VF Schottky Diode
The NSR01F30MX Schottky barrier diode is optimized for low forward voltage applications. It is packaged in an ultra small x3DFN2 package that enables designers to meet the challenging task of achieving higher efficiency and meeting reduced space requirements.
特性- Very Low Forward Voltage Drop - 350 mV @ 10 mA
- Low Reverse current - 5 uA @ 10 V
- ESD Rating - Human Body Model: Class 3BESD Rating - Machine Model: Class C
- Pb and Halide Free Device
- 100 mA of Continuous Forward Current
| 优势- Higher Efficiency
- Higher Efficiency
- ESD Robust
- Enviromentally Safe
|
应用- LCD and Keypad Backlighting
- Camera Photo Flash
- Buck and Boost DC-DC Converters
- Reverse Voltage and Current Protection
- Clamping and Protection
| 终端产品- Mobile Handsets
- Wearables
- MP3 Players
- Digital Cameras and Camcorders
- GPS
|
仿真模型 (4)
封装图纸 (1)
数据表 (1)
产品订购型号
产品 | 状况 | Compliance | 封装 | MSL* | 容器 | 预算价格 (1千个数量的单价) |
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NSR01F30MXT5G | Active | Pb-free
Halide free | X3DFN-2 | 152AF | 1 | Tape and Reel | 10000 | $0.0467 |
订购产品技术参数
Product | Configuration | VRRM Min (V) | VF Max (V) | IRM Max (µA) | IO(rec) Max (A) | IFSM Max (A) | trr Max (ns) | Cj Max (pF) |
---|
NSR01F30MXT5G | Single | 30 | 0.35 | 5 | 0.1 | 2 | - | 0.9 |