NSS1C300E: 3 A, 100 V Low VCE(sat) PNP Transistor

NSS1C300E

特性
  • NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable
  • These Devices are Pb-Free and are RoHS Compliant
数据表 (1)
Document TitleDocument ID/SizeRevisionRevision Date
100 V, 3.0 A, Low VCE(sat) PNP TransistorNSS1C300E/D (76kB)7
仿真模型 (4)
Document TitleDocument ID/SizeRevisionRevision Date
NSS1C300ET4G LIB ModelNSS1C300E_LIB (0.0kB)0
NSS1C300ET4G_SIN_ModelNSS1C300E_SIN (1.0kB)0
NSS1C300ET4G_SP2_ModelNSS1C300E_SP2 (0.0kB)0
NSS1C300ET4G_SP3_ModelNSS1C300E_SP3 (0.0kB)0
封装图纸 (1)
Document TitleDocument ID/SizeRevision
DPAK (SINGLE GAUGE) TO-252369C (34.6kB)F
产品订购型号
产品状况Compliance封装MSL*容器预算价格 (1千个数量的单价)
NSS1C300ET4GActiveAEC Qualified Pb-free Halide freeDPAK-3369C1Tape and Reel2500$0.2267
NSV1C300ET4GActiveAEC Qualified PPAP Capable Pb-free Halide freeDPAK-3369C1Tape and Reel2500$0.2493
订购产品技术参数
ProductPolarityTypeVCE(sat) Max (V)IC Continuous (A)V(BR)CEO Min (V)hFE MinhFE MaxfT Min (MHz)PTM Max (W)
NSS1C300ET4GPNPLow VCE(sat)0.43100120360-12.5
NSV1C300ET4GPNPLow VCE(sat)0.43100120360-12.5
100 V, 3.0 A, Low VCE(sat) PNP Transistor (76kB) NSS1C300E
NSS1C300ET4G LIB Model NSS1C300E
NSS1C300ET4G_SIN_Model NSS1C300E
NSS1C300ET4G_SP2_Model NSS1C300E
NSS1C300ET4G_SP3_Model NSS1C300E
DPAK (SINGLE GAUGE) TO-252 NCV8408