The combination of low saturation voltage and high gain makes this Bipolar Power Transistor an ideal device for high speed switching applications where power saving is a concern.
特性
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应用
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Document Title | Document ID/Size | Revision | Revision Date |
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Power Saving Alternatives Using Low VCE(sat) BJTs (VoPPT) | TND404/D (10341.0kB) | 0 | Aug, 2010 |
Document Title | Document ID/Size | Revision | Revision Date |
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NPN Bipolar Power Transistor 40V, 3A, Low VCE(sat) | NSS40301MZ4/D (92.0kB) | 3 |
Document Title | Document ID/Size | Revision |
---|---|---|
SOT-223 (TO-261) 4 LEAD | 318E-04 (68.4kB) | N |
Document Title | Document ID/Size | Revision | Revision Date |
---|---|---|---|
PSpice Model | NSS40301MZ4.LIB (0.0kB) | 0 | |
Saber Model | NSS40301MZ4.SIN (1.0kB) | 0 | |
Spice2 Model | NSS40301MZ4.SP2 (1.0kB) | 0 | |
Spice3 Model | NSS40301MZ4.SP3 (1.0kB) | 0 |
产品 | 状况 | Compliance | 封装 | MSL* | 容器 | 预算价格 (1千个数量的单价) | ||
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NSS40301MZ4T1G | Active | AEC Qualified Pb-free Halide free | SOT-223-4 / TO-261-4 | 318E-04 | 1 | Tape and Reel | 1000 | $0.1723 |
NSS40301MZ4T3G | Active | AEC Qualified Pb-free Halide free | SOT-223-4 / TO-261-4 | 318E-04 | 1 | Tape and Reel | 4000 | $0.1723 |
NSV40301MZ4T1G | Active | AEC Qualified PPAP Capable Pb-free Halide free | SOT-223-4 / TO-261-4 | 318E-04 | 1 | Tape and Reel | 1000 | $0.2259 |
NSV40301MZ4T3G | Active | AEC Qualified PPAP Capable Pb-free Halide free | SOT-223-4 / TO-261-4 | 318E-04 | 1 | Tape and Reel | 4000 | $0.2259 |
Product | Polarity | Type | VCE(sat) Max (V) | IC Continuous (A) | V(BR)CEO Min (V) | hFE Min | hFE Max | fT Min (MHz) | PTM Max (W) |
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NSS40301MZ4T1G | NPN | Low VCE(sat) | 0.2 | 3 | 40 | 200 | 500 | 100 | 2 |
NSS40301MZ4T3G | NPN | Low VCE(sat) | 0.2 | 3 | 40 | 200 | 500 | 100 | 2 |
NSV40301MZ4T1G | NPN | Low VCE(sat) | 0.2 | 3 | 40 | 200 | 500 | 100 | 2 |
NSV40301MZ4T3G | NPN | Low VCE(sat) | 0.2 | 3 | 40 | 200 | 500 | 100 | 2 |