NST847BDP6: Dual NPN Bipolar Transistor
The Dual NPN Bipolar Transistor device is a spin off of our popular SOT23, SOT323, SOT563 three leaded device. It is designed for general purpose amplifier applications and is housed in the SOT963 six leaded surface mount package. With two discrete devices in one package, this device is ideal for low power surface mount applications where board space is at a premium.
特性- hFE, 200-450
- Low VCE(sat), <0.25 V
- Simplifies Circuit Design
- Reduces Board Space
- Reduces Component Count
- This is a Pb-Free Device
- NPN General Purpose Transistor
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数据表 (1)
封装图纸 (1)
产品订购型号
产品 | 状况 | Compliance | 封装 | MSL* | 容器 | 预算价格 (1千个数量的单价) |
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NST847BDP6T5G | Active | AEC Qualified
Pb-free
Halide free | SOT-963 | 527AD | 1 | Tape and Reel | 8000 | $0.064 |
订购产品技术参数
Product | Polarity | Type | VCE(sat) Max (V) | IC Continuous (A) | V(BR)CEO Min (V) | hFE Min | hFE Max | fT Min (MHz) | PTM Max (W) |
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NST847BDP6T5G | Dual NPN | | | 0.1 | 45 | 200 | 450 | 100 | 0.42 |