NTB5605P: Power MOSFET -60V -18.5A 140 mOhm Single P-Channel D2PAK

Designed for high speed switching applications in power supplies, converters, PWM motor controls, and other inductive loads, this power MOSFET can withstand high energy in the avalanche and commutation modes. The avalanche energy rating is specified to eliminate the guesswork in designs where inductive loads are switched, and to offer additional safety margin against unexpected voltage transients. The energy efficient design also offers a drain to source diode with fast recovery time.

特性
  • Designed for Low RDS(on)
  • Withstands High Energy in Avalanche and Commutation Modes.
  • Pb-Free Packages are Available
应用
  • Power Supplies
  • PWM Motor Control
  • Converters
  • Power Management
封装
仿真模型 (4)
Document TitleDocument ID/SizeRevisionRevision Date
P Spice ModelNTB5605P.LIB (1.0kB)0
Saber ModelNTB5605P.SIN (1.0kB)0
Spice 2 ModelNTB5605P.SP2 (1.0kB)0
Spice 3 ModelNTB5605P.SP3 (1.0kB)0
封装图纸 (1)
Document TitleDocument ID/SizeRevision
D2PAK 2 LEAD418B-04 (35.3kB)L
数据表 (1)
Document TitleDocument ID/SizeRevisionRevision Date
Power MOSFET - 60 V, - 18.5 A, P-Channel, D2PAKNTB5605P/D (138.0kB)4
产品订购型号
产品状况Compliance封装MSL*容器预算价格 (1千个数量的单价)
NTB5605PGObsoletePb-free Halide freeD2PAK-3418B-041Tube50
NTB5605PT4GActivePb-free Halide freeD2PAK-3418B-041Tape and Reel800$0.4848
订购产品技术参数
ProductChannel PolarityConfigurationV(BR)DSS Min (V)VGS Max (V)VGS(th) Max (V)ID Max (A)PD Max (W)RDS(on) Max @ VGS = 2.5 V (mΩ)RDS(on) Max @ VGS = 4.5 V (mΩ)RDS(on) Max @ VGS = 10 V (mΩ)Qg Typ @ VGS = 4.5 V (nC)Qg Typ @ VGS = 10 V (nC)Qgd Typ @ VGS = 4.5 V (nC)Qrr Typ (nC)Ciss Typ (pF)Coss Typ (pF)Crss Typ (pF)
NTB5605PT4GP-ChannelSingle6020218.58814013714073021167
Power MOSFET - 60 V, - 18.5 A, P-Channel, D2PAK (138.0kB) NTBV5605
P Spice Model NTBV5605
Saber Model NTBV5605
Spice 2 Model NTBV5605
Spice 3 Model NTBV5605
D2PAK 2 LEAD NVB6412AN