NTD4808N: Power MOSFET 30V 63A 8 mOhm Single N-Channel DPAK

Power MOSFET 30 V, 63 A, N-Channel, DPAK/IPAK

特性
  • Low RDS(on) to Minimize Conduction Losses
  • Low Capacitance to Minimize Driver Losses
  • Optimized Gate Charge to Minimize Switching Losses
应用
  • CPU Power Delivery
  • Low Side Switching
封装
设计和开发工具 (1)
Document TitleDocument ID/SizeRevisionRevision Date
EFFICIENCY SIMULATOR AND MOSFET SELECTOR FOR T6T8 rev3.5EFFICIENCY SIMULATOR AND MOSFET SELECTOR FOR T3 AND T6 (4250kB)3.5May, 2015
数据表 (1)
Document TitleDocument ID/SizeRevisionRevision Date
Power MOSFET, 30 V, 63 A, Single N-ChannelNTD4808N/D (116kB)8Sep, 2014
应用注释 (1)
Document TitleDocument ID/SizeRevisionRevision Date
Description of the ON Semiconductor MOSFET ModelAND9033CN/D (175.8kB)1
封装图纸 (2)
Document TitleDocument ID/SizeRevision
DPAK 4 LEAD Single Gauge Surface Mount369AA (62.3kB)B
DPAK INSERTION MOUNT369D (51.5kB)C
仿真模型 (4)
Document TitleDocument ID/SizeRevisionRevision Date
PSpice ModelNTD4808N.LIB (1.0kB)0
Saber modelNTD4808N.SIN (1.0kB)0
Spice2 ModelNTD4808N.SP2 (1.0kB)0
Spice3 ModelNTD4808N.SP3 (1.0kB)0
产品订购型号
产品状况Compliance封装MSL*容器预算价格 (1千个数量的单价)
NTD4808N-1GActivePb-free Halide freeIPAK-4369D1Tube75$0.2067
NTD4808NT4GLast ShipmentsPb-free Halide freeDPAK-3369AA1Tape and Reel2500
订购产品技术参数
ProductChannel PolarityConfigurationV(BR)DSS Min (V)VGS Max (V)VGS(th) Max (V)ID Max (A)PD Max (W)RDS(on) Max @ VGS = 2.5 V (mΩ)RDS(on) Max @ VGS = 4.5 V (mΩ)RDS(on) Max @ VGS = 10 V (mΩ)Qg Typ @ VGS = 4.5 V (nC)Qg Typ @ VGS = 10 V (nC)Qgd Typ @ VGS = 4.5 V (nC)Qrr Typ (nC)Ciss Typ (pF)Coss Typ (pF)Crss Typ (pF)
NTD4808N-1GN-ChannelSingle30202.56354.612.4811.3264.99.71538334180
Power MOSFET, 30 V, 63 A, Single N-Channel (116kB) NTD4808N
EFFICIENCY SIMULATOR AND MOSFET SELECTOR FOR T6T8 rev3.5 NVD4804N
Description of the ON Semiconductor MOSFET Model NVD4804N
PSpice Model NTD4808N
Saber model NTD4808N
Spice2 Model NTD4808N
Spice3 Model NTD4808N
DPAK INSERTION MOUNT NTDV3055L104
DPAK 4 LEAD Single Gauge Surface Mount NVD6824NL