NTHD4102P: Power MOSFET -20V -4.1A 80 mOhm Dual P-Channel ChipFET
Power MOSFET -20 V, -4.1 A Dual P-Channel ChipFET™
特性- Offers an Ultra Low RDS (ON) Solution in the ChipFET™ Package
- Miniature ChipFet Package 40% Smaller Footprint than TSOP-6
- Low Profile (<1.1mm) Allows it to Fit Easily into Extremely Thin Environments such as Portable Electronics
- Simplifies Circuit Designs since Additional Boost Circuits for Gate Voltages are not Required
- Operated at Standard Logic Level Gate Drive, Facilitating Future Migration to Lower Levels using the same Basic Topology
- Pb-Free Package is Available
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应用- Optimized for Battery and Load Management Applications in Portable Equipment such as MP3 Players, Cell Phones, and PDAs
- Charge Control in Battery Chargers
- Buck and Boost Converters
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封装
应用注释 (2)
数据表 (1)
仿真模型 (4)
封装图纸 (1)
| Document Title | Document ID/Size | Revision |
|---|
| ChipFET | 1206A-03 (71.4kB) | K |
产品订购型号
| 产品 | 状况 | Compliance | 封装 | MSL* | 容器 | 预算价格 (1千个数量的单价） |
|---|
| NTHD4102PT1G | Active | Pb-free
Halide free | ChipFET-8 | 1206A-03 | 1 | Tape and Reel | 3000 | $0.3333 |
| NTHD4102PT3G | Last Shipments | Pb-free
Halide free | ChipFET-8 | 1206A-03 | 1 | Tape and Reel | 10000 | |
| NTHD4102PT1 | Obsolete | | ChipFET-8 | 1206A-03 | 1 | Tape and Reel | 3000 | |
订购产品技术参数
| Product | Channel Polarity | Configuration | V(BR)DSS Min (V) | VGS Max (V) | VGS(th) Max (V) | ID Max (A) | PD Max (W) | RDS(on) Max @ VGS = 2.5 V (mΩ) | RDS(on) Max @ VGS = 4.5 V (mΩ) | RDS(on) Max @ VGS = 10 V (mΩ) | Qg Typ @ VGS = 4.5 V (nC) | Qg Typ @ VGS = 10 V (nC) | Qgd Typ @ VGS = 4.5 V (nC) | Qrr Typ (nC) | Ciss Typ (pF) | Coss Typ (pF) | Crss Typ (pF) |
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| NTHD4102PT1G | P-Channel | Dual | 20 | 8 | 1.5 | 4.1 | 2.1 | 110 | 80 | | 8.6 | | 2.6 | 0.01 | 750 | 100 | 45 |
