NTJD1155L: Small Signal MOSFET -8V -1.3A 175 mOhm Dual P-Channel SC−88 with Level-Shift
The NTJD1155L integrates a P and N-Channel MOSFET in a single package. This device is particularly suited for portable electronic equipment where low control signals, low battery voltages and high load currents are needed. The P-Channel device is specifically designed as a load switch using ON Semiconductor state-of-the-art trench technology. The N-Channel, with an external resistor (R1), functions as a level-shift to drive the P-Channel. The N-Channel MOSFET has internal ESD protection and can be driven by logic signals as low as 1.5 V. The NTJD1155L operates on supply lines from 1.8 to 8.0 V and can drive loads up to 1.3 A with 8.0 V applied to both VIN and VON/OFF.
特性- Extremely Low RDS(on) P-Channel Load Switch MOSFET
- Level Shift MOSFET is ESD Protected
- Low Profile, Small Footprint Package
- VINRange 1.8 to 8.0 V
- ON/OFF Range 1.5 to 8.0 V
- ESD Rating of 3000 V
- Pb-Free Package is Available
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应用- Integrated High Side Load Switch with built in Level Shift
- Portable Equipment including Cell Phones, Digital Cameras, PDAs, Media Players, and Games.
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封装
仿真模型 (2)
封装图纸 (1)
数据表 (1)
产品订购型号
| 产品 | 状况 | Compliance | 封装 | MSL* | 容器 | 预算价格 (1千个数量的单价） |
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| NTJD1155LT1G | Active | Pb-free
Halide free | SC-88-6 / SC-70-6 / SOT-363-6 | 419B-02 | 1 | Tape and Reel | 3000 | $0.1 |
| NTJD1155LT1 | Obsolete | | SC-88-6 / SC-70-6 / SOT-363-6 | 419B-02 | 1 | Tape and Reel | 3000 | |
订购产品技术参数
| Product | Channel Polarity | Configuration | V(BR)DSS Min (V) | VGS Max (V) | VGS(th) Max (V) | ID Max (A) | PD Max (W) | RDS(on) Max @ VGS = 2.5 V (mΩ) | RDS(on) Max @ VGS = 4.5 V (mΩ) | RDS(on) Max @ VGS = 10 V (mΩ) | Qg Typ @ VGS = 4.5 V (nC) | Qg Typ @ VGS = 10 V (nC) | Qgd Typ @ VGS = 4.5 V (nC) | Qrr Typ (nC) | Ciss Typ (pF) | Coss Typ (pF) | Crss Typ (pF) |
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| NTJD1155LT1G | P-Channel | Dual | 8 | 8 | 1 | 1.3 | 0.4 | 220 | 175 | | | | | | | | |
