NTJD4401N: Small Signal MOSFET 20V 630mA 375 mOhm Dual N-Channel SC88 with ESD Protection
This N-Channel dual device was designed with a small footprint package (2x2 mm) with ON Semiconductor's leading planar process for small footprint and increased efficiency. The low figure of merit is particularly suited for single or dual cell Li-Ion battery supplied devices such as cell phones, media players, digital cameras, and PDAs.
特性- Small Footprint (2 x 2 mm)
- Low Gate Charge N-Channel Device
- ESD Protected Gate
- Same Package as SC-70 (6 Leads)
- Pb-Free Packages are Available
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应用- Load Power Switching
- Li-Ion Battery Supplied Devices
- Cell Phones, Media Players, Digital Cameras, PDAs
- DC-DC Conversion
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封装
仿真模型 (4)
封装图纸 (1)
数据表 (1)
产品订购型号
产品 | 状况 | Compliance | 封装 | MSL* | 容器 | 预算价格 (1千个数量的单价) |
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NTJD4401NT1G | Active | Pb-free
Halide free | SC-88-6 / SC-70-6 / SOT-363-6 | 419B-02 | 1 | Tape and Reel | 3000 | $0.0867 |
NTJD4401NT2G | Last Shipments | Pb-free
Halide free | SC-88-6 / SC-70-6 / SOT-363-6 | 419B-02 | 1 | Tape and Reel | 3000 | |
NTJD4401NT1 | Obsolete | | SC-88-6 / SC-70-6 / SOT-363-6 | 419B-02 | 1 | Tape and Reel | 3000 | |
订购产品技术参数
Product | Channel Polarity | Configuration | V(BR)DSS Min (V) | VGS Max (V) | VGS(th) Max (V) | ID Max (A) | PD Max (W) | RDS(on) Max @ VGS = 2.5 V (mΩ) | RDS(on) Max @ VGS = 4.5 V (mΩ) | RDS(on) Max @ VGS = 10 V (mΩ) | Qg Typ @ VGS = 4.5 V (nC) | Qg Typ @ VGS = 10 V (nC) | Qgd Typ @ VGS = 4.5 V (nC) | Qrr Typ (nC) | Ciss Typ (pF) | Coss Typ (pF) | Crss Typ (pF) |
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NTJD4401NT1G | N-Channel | Dual | 20 | 12 | 1.5 | 0.63 | 0.27 | 445 | 375 | | 1.3 | | 0.4 | | 33 | 13 | 2.8 |