NTLJD3119C: Power MOSFET 20V 4.6A 65 mOhm Complementary WDFN6
Power MOSFET 20 V/-20 V, 4.6 A/-4.1 A, µCool ™ Complementary, 2x2 mm, WDFN Package
特性- Complementary N-Channel and P-Channel MOSFET
- WDFN Package with Exposed Drain Pad for Excellent Thermal Conduction
| 优势- Easy Circuit Layout, Circuit Design Flexibility
- Excellent Thermal Conduction
|
封装
应用注释 (2)
数据表 (1)
| Document Title | Document ID/Size | Revision | Revision Date |
|---|
| Power MOSFET | NTLJD3119C/D (172kB) | 5 | Aug, 2016 |
仿真模型 (2)
| Document Title | Document ID/Size | Revision | Revision Date |
|---|
| PSpice Model | NTLJD3119C.LIB (3.0kB) | 0 | |
| Spice3 Model | NTLJD3119C.SP3 (3.0kB) | 0 | |
封装图纸 (1)
产品订购型号
| 产品 | 状况 | Compliance | 封装 | MSL* | 容器 | 预算价格 (1千个数量的单价） |
|---|
| NTLJD3119CTAG | Last Shipments | Pb-free
Halide free | WDFN-6 | 506AN | 1 | Tape and Reel | 3000 | |
| NTLJD3119CTBG | Active | Pb-free
Halide free | WDFN-6 | 506AN | 1 | Tape and Reel | 3000 | $0.2179 |
订购产品技术参数
| Product | Channel Polarity | Configuration | V(BR)DSS Min (V) | VGS Max (V) | VGS(th) Max (V) | ID Max (A) | PD Max (W) | RDS(on) Max @ VGS = 2.5 V (mΩ) | RDS(on) Max @ VGS = 4.5 V (mΩ) | RDS(on) Max @ VGS = 10 V (mΩ) | Qg Typ @ VGS = 4.5 V (nC) | Qg Typ @ VGS = 10 V (nC) | Qgd Typ @ VGS = 4.5 V (nC) | Qrr Typ (nC) | Ciss Typ (pF) | Coss Typ (pF) | Crss Typ (pF) |
|---|
| NTLJD3119CTBG | Complementary | Dual | 20 | 8 | 1 | 4.6 | 2.3 | 85 | 65 | | 3.7 | | 1 | 3 | 271 | 72 | 43 |
