NTLUS3A18PZ: Power MOSFET -20V -8.2A 18 mOhm Single P-Channel UDFN6 with ESD Protection _ BDTIC 中国领先电子元器件代理商

NTLUS3A18PZ: Power MOSFET -20V -8.2A 18 mOhm Single P-Channel UDFN6 with ESD Protection

Power MOSFET, -20 V, -8.2 A, Single P-Channel, ESD, 2.0x2.0x0.55 mm UDFN-6 Package

特性

UDFN Package with Exposed Drain Pads
Low Profile UDFN 2.0x2.0x0.55 mm
Ultra Low RDS(on)
ESD DiodeProtected Gate

优势

Excellent Thermal Conduction
Board Space Saving
Improve System Efficiency

应用

Optimized for Power Management Applications for PortableProducts, such as Cell Phones, Media Tablets, PMP, DSC, GPS, andOthers
Battery Switch
High Side Load Switch

终端产品

Portable Products such as Cell Phones, Media Tablets, PMP, DSC, GPS, and Others

封装

NTLUS3A18PZ 封装

软件 (1)

Document Title	Document ID/Size	Revision	Revision Date
ON Semiconductor Integrated Development Environment (IDE)	WDK1.0GEVK_Software (351925kB)	0

封装图纸 (1)

Document Title	Document ID/Size	Revision
UDFN6, 2x2, 0.65P	517BG (66.7kB)	A

应用注释 (1)

Document Title	Document ID/Size	Revision	Revision Date
Using MOSFETs in Load Switch Applications	AND9093/D (344kB)	1	Feb, 2014

评估板文档 (5)

Document Title	Document ID/Size	Revision	Revision Date
WDK1.0GEVK Docking Station Bill of Materials ROHS Compliant	WDK1.0GEVK_Docking_Station_BOM_ROHS.rev0 (49kB)	0
WDK1.0GEVK Docking Station Schematic	WDK1.0GEVK_Docking_Station_Schematic.rev0 (231kB)	0
WDK1.0GEVK Wearable Development Kit Schematic	WDK1.0GEVK_Wearable_Development_Kit_Schematic.rev0 (614kB)	0
WDK1.0GEVK Wearable Development Kit User's manual	WDK1.0GEVK_Users_Manual.pdf (5241kB)	2
WDK1.0GEVK Wearable Reference Design Bill of Materials ROHS Compliant	WDK1.0GEVK_Wearable_Reference_Design_BOM_ROHS.rev0 (53kB)	0

数据表 (1)

Document Title	Document ID/Size	Revision	Revision Date
Power MOSFET, -20 V, -8.2 A, Single Pch, ESD, 2.0x2.0x0.55 mm, UDFN Package	NTLUS3A18PZ/D (174kB)	4	Apr, 2016

评估板与开发工具

产品	状况	Compliance	简短说明
WDK1.0GEVK	Active		Wearable Reference Design and Development Kit

产品订购型号

产品	状况	Compliance	封装		MSL*	容器		预算价格 (1千个数量的单价）
NTLUS3A18PZTAG	Active	Pb-free Halide free	UDFN-6	517BG	1	Tape and Reel	3000	$0.2
NTLUS3A18PZTBG	Active	Pb-free Halide free	UDFN-6	517BG	1	Tape and Reel	3000	$0.2
NTLUS3A18PZTCG	Active	Pb-free Halide free	UDFN-6	517BG	1	Tape and Reel	3000	$0.24

订购产品技术参数

Product	Channel Polarity	Configuration	V(BR)DSS Min (V)	VGS Max (V)	VGS(th) Max (V)	ID Max (A)	PD Max (W)	RDS(on) Max @ VGS = 2.5 V (mΩ)	RDS(on) Max @ VGS = 4.5 V (mΩ)	RDS(on) Max @ VGS = 10 V (mΩ)	Qg Typ @ VGS = 4.5 V (nC)	Qg Typ @ VGS = 10 V (nC)	Qgd Typ @ VGS = 4.5 V (nC)	Qrr Typ (nC)	Ciss Typ (pF)	Coss Typ (pF)	Crss Typ (pF)
NTLUS3A18PZTAG	P-Channel	Single	-20	8	-1	-8.2	1.7	28	18				8.8	12	2240	240	210
NTLUS3A18PZTBG	P-Channel	Single	-20	8	-1	-8.2	1.7	28	18				8.8	12	2240	240	210
NTLUS3A18PZTCG	P-Channel

Power MOSFET, -20 V, -8.2 A, Single Pch, ESD, 2.0x2.0x0.55 mm, UDFN Package (174kB) NTLUS3A18PZ

WDK1 WDK1.0GEVK

Using MOSFETs in Load Switch Applications NTUD3170NZ

WDK1 WDK1.0GEVK

WDK1 WDK1.0GEVK

WDK1 WDK1.0GEVK

WDK1 WDK1.0GEVK

WDK1 WDK1.0GEVK

UDFN6, 2x2, 0.65P NVLUS4C12N

©1993 - 2024 BDTIC