NTMD4N03: Power MOSFET 30V 4A 60 mOhm Dual N-Channel S0-8 _ BDTIC 中国领先电子元器件代理商

NTMD4N03: Power MOSFET 30V 4A 60 mOhm Dual N-Channel S0-8

Power MOSFET 4 Amps, 30 Volts, N-Channel SO8 Dual

特性

Designed for use in low voltage, high speed switching applications
Ultra Low On-Resistance Provides Higher Efficiency and Extends Battery Life
- RDS(on) = 0.048 Ω, VGS = 10V (Typ)
- RDS(on) = 0.065 Ω, VGS = 4.5V (Typ)
Miniature SO-8 Surface Mount Package - Saves Board Space
Diode is Characterized for Use in Bridge Circuits
Diode Exhibits High Speed, with Soft Recovery
Pb-Free Package is Available

应用

Dc-Dc Converters, Computers, Printers, Cellular Phones, Cordless Phones, Disk Drives, and Tape Drives

封装

NTMD4N03 封装

仿真模型 (4)

Document Title	Document ID/Size	Revision	Revision Date
P Spice Model	NTMD4N03R.LIB (1.0kB)	0
Saber Model	NTMD4N03R.SIN (1.0kB)	0
Spice 2 Model	NTMD4N03R.SP2 (1.0kB)	0
Spice 3 Model	NTMD4N03R.SP3 (1.0kB)	0

封装图纸 (1)

Document Title	Document ID/Size	Revision
SOIC-8 Narrow Body	751-07 (62.6kB)	AK

数据表 (1)

Document Title	Document ID/Size	Revision	Revision Date
Power MOSFET 4 Amps, 30 Volts, N-Channel SO8 Dual	NTMD4N03R2/D (120.0kB)	4

产品订购型号

产品	状况	Compliance	封装		MSL*	容器		预算价格 (1千个数量的单价）
NTMD4N03R2G	Active	Pb-free Halide free	SOIC-8	751-07	1	Tape and Reel	2500	$0.308

订购产品技术参数

Product	Channel Polarity	Configuration	V(BR)DSS Min (V)	VGS Max (V)	VGS(th) Max (V)	ID Max (A)	PD Max (W)	RDS(on) Max @ VGS = 2.5 V (mΩ)	RDS(on) Max @ VGS = 4.5 V (mΩ)	RDS(on) Max @ VGS = 10 V (mΩ)	Qg Typ @ VGS = 4.5 V (nC)	Qg Typ @ VGS = 10 V (nC)	Qgd Typ @ VGS = 4.5 V (nC)	Qrr Typ (nC)	Ciss Typ (pF)	Coss Typ (pF)	Crss Typ (pF)
NTMD4N03R2G	N-Channel	Dual	30	20	3	4	2		80	60		8		0.008	285	95	35

Power MOSFET 4 Amps, 30 Volts, N-Channel SO8 Dual (120.0kB) NVMD4N03

P Spice Model NVMD4N03

Saber Model NVMD4N03

Spice 2 Model NVMD4N03

Spice 3 Model NVMD4N03

SOIC-8 Narrow Body CM1216

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