NTMD6N02: Power MOSFET 20V 6.5A 35 mOhm Dual N-Channel SO-8
Power MOSFET 6.0 Amps, 20 Volts N-Channel Enhancement Mode Dual, SO-8 Package
特性- Ultra Low RDS(on)
- Higher Efficiency Extending Battery Life
- Logic Level Gate Drive
- Miniature Dual SO-8 Surface Mount Package
- Diode Exhibits High Speed, Soft Recovery
- Avalanche Energy Specified
- SO-8 Mounting Information Provided
- Pb-Free Package is Available
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应用- DC-DC Converters
- Low Voltage Motor Control
- Power Management in Portable and Battery-Powered Products, i.e.: Computers, Printers, Cellular and Cordless Telephones and PCMCIA Cards
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封装
仿真模型 (4)
封装图纸 (1)
数据表 (1)
产品订购型号
| 产品 | 状况 | Compliance | 封装 | MSL* | 容器 | 预算价格 (1千个数量的单价） |
|---|
| NTMD6N02R2G | Active | Pb-free
Halide free | SOIC-8 | 751-07 | 1 | Tape and Reel | 2500 | $0.24 |
| NTMD6N02R2 | Last Shipments | | SOIC-8 | 751-07 | 1 | Tape and Reel | 2500 | |
订购产品技术参数
| Product | Channel Polarity | Configuration | V(BR)DSS Min (V) | VGS Max (V) | VGS(th) Max (V) | ID Max (A) | PD Max (W) | RDS(on) Max @ VGS = 2.5 V (mΩ) | RDS(on) Max @ VGS = 4.5 V (mΩ) | RDS(on) Max @ VGS = 10 V (mΩ) | Qg Typ @ VGS = 4.5 V (nC) | Qg Typ @ VGS = 10 V (nC) | Qgd Typ @ VGS = 4.5 V (nC) | Qrr Typ (nC) | Ciss Typ (pF) | Coss Typ (pF) | Crss Typ (pF) |
|---|
| NTMD6N02R2G | N-Channel | Dual | 20 | 12 | 1.2 | 6.5 | 2 | | 35 | | 12 | | 4 | 0.02 | 785 | 260 | 75 |
