NTMS4807N: Power MOSFET 30V 14.8A 6.1 mOhm Single N-Channel SO-8

This is a 30 V N-Channel Power MOSFET.

特性
  • Low Capacitance to Minimize Driver Losses
  • Optimized Gate Charge to Minimize Switching Losses
  • This is a Pb-Free Device
  • Low RDS(on) to Minimize Conduction Losses
应用
  • Disk Drives
  • DC-DC Converters
  • Printers
封装
设计和开发工具 (1)
Document TitleDocument ID/SizeRevisionRevision Date
EFFICIENCY SIMULATOR AND MOSFET SELECTOR FOR T6T8 rev3.5EFFICIENCY SIMULATOR AND MOSFET SELECTOR FOR T3 AND T6 (4250kB)3.5May, 2015
数据表 (1)
Document TitleDocument ID/SizeRevisionRevision Date
Power MOSFET, 30 V, 14.8 A, N-ChannelNTMS4807N/D (88.0kB)O
应用注释 (1)
Document TitleDocument ID/SizeRevisionRevision Date
Description of the ON Semiconductor MOSFET ModelAND9033CN/D (175.8kB)1
封装图纸 (1)
Document TitleDocument ID/SizeRevision
SOIC-8 Narrow Body751-07 (62.6kB)AK
仿真模型 (4)
Document TitleDocument ID/SizeRevisionRevision Date
PSpice ModelNTMS4807NR2G.LIB (1.0kB)0
Saber ModelNTMS4807NR2G.SIN (1.0kB)0
Spice2 ModelNTMS4807NR2G.SP2 (1.0kB)0
Spice3 ModelNTMS4807NR2G.SP3 (1.0kB)0
产品订购型号
产品状况Compliance封装MSL*容器预算价格 (1千个数量的单价)
NTMS4807NR2GActivePb-free Halide freeSOIC-8751-071Tape and Reel2500$0.32
订购产品技术参数
ProductChannel PolarityConfigurationV(BR)DSS Min (V)VGS Max (V)VGS(th) Max (V)ID Max (A)PD Max (W)RDS(on) Max @ VGS = 2.5 V (mΩ)RDS(on) Max @ VGS = 4.5 V (mΩ)RDS(on) Max @ VGS = 10 V (mΩ)Qg Typ @ VGS = 4.5 V (nC)Qg Typ @ VGS = 10 V (nC)Qgd Typ @ VGS = 4.5 V (nC)Qrr Typ (nC)Ciss Typ (pF)Coss Typ (pF)Crss Typ (pF)
NTMS4807NR2GN-ChannelSingle3020314.82.57.56.1244610.4232900562307
Power MOSFET, 30 V, 14.8 A, N-Channel (88.0kB) NTMS4807N
EFFICIENCY SIMULATOR AND MOSFET SELECTOR FOR T6T8 rev3.5 NVD4804N
Description of the ON Semiconductor MOSFET Model NVD4804N
PSpice Model NTMS4807N
Saber Model NTMS4807N
Spice2 Model NTMS4807N
Spice3 Model NTMS4807N
SOIC-8 Narrow Body CM1216