NVD5802N: Power MOSFET 40V, 101A, 4.4 mOhm, Single N-Channel, DPAK.
Automotive Power MOSFET. 40V, 101A, 4.4 mOhm, Single N-Channel, DPAK. AEC-Q101 Qualified MOSFET and PPAP capable suitable for automotive applications.
特性- Low RDS(on)
- Low Capacitance
- Optimized Gate Charge
- MSL 1/260C
- AEC Q101 Qualified
- 100% Avalanche Tested
- PbFree Devices
- DCDC Converters
- Motor Driver
| 优势- Minimize Conduction Losses
- Minimizes Driver Losses
- Minimizes Switching Losses
|
封装
应用注释 (1)
数据表 (1)
仿真模型 (4)
封装图纸 (1)
产品订购型号
| 产品 | 状况 | Compliance | 封装 | MSL* | 容器 | 预算价格 (1千个数量的单价） |
|---|
| NVD5802NT4G | Active | AEC Qualified
PPAP Capable
Pb-free
Halide free | DPAK-3 | 369C | 1 | Tape and Reel | 2500 | $0.5874 |
订购产品技术参数
| Product | Channel Polarity | Configuration | V(BR)DSS Min (V) | VGS Max (V) | VGS(th) Max (V) | ID Max (A) | PD Max (W) | RDS(on) Max @ VGS = 2.5 V (mΩ) | RDS(on) Max @ VGS = 4.5 V (mΩ) | RDS(on) Max @ VGS = 10 V (mΩ) | Qg Typ @ VGS = 4.5 V (nC) | Qg Typ @ VGS = 10 V (nC) | Qgd Typ @ VGS = 4.5 V (nC) | Qrr Typ (nC) | Ciss Typ (pF) | Coss Typ (pF) | Crss Typ (pF) |
|---|
| NVD5802NT4G | N-Channel | Single | 40 | 20 | 3.5 | 101 | 93.75 | | 7.8 | 4.4 | | 75 | 15 | 15 | 5300 | 850 | 550 |
