NVMD4N03: Power MOSFET 30V, 4A, 60 mOhm, Dual N-Channel, S0-8, Logic Level.
Automotive Power MOSFET. 30V, 4A, 60 mOhm, Dual N-Channel, S0-8, Logic Level. AEC-Q101 Qualified MOSFET and PPAP capable suitable for automotive applications.
特性- Designed for use in low voltage, high speed switching applications
- Ultra Low On-Resistance Provides Higher Efficiency and Extends Battery Life
- Miniature SO-8 Surface Mount Package - Saves Board Space
- Diode is Characterized for Use in Bridge Circuits
- Diode Exhibits High Speed, with Soft Recovery
- Pb-Free Package is Available
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封装
仿真模型 (4)
封装图纸 (1)
数据表 (1)
产品订购型号
| 产品 | 状况 | Compliance | 封装 | MSL* | 容器 | 预算价格 (1千个数量的单价） |
|---|
| NVMD4N03R2G | Active | AEC Qualified
PPAP Capable
Pb-free
Halide free | SOIC-8 | 751-07 | 1 | Tape and Reel | 2500 | $0.3388 |
订购产品技术参数
| Product | Channel Polarity | Configuration | V(BR)DSS Min (V) | VGS Max (V) | VGS(th) Max (V) | ID Max (A) | PD Max (W) | RDS(on) Max @ VGS = 2.5 V (mΩ) | RDS(on) Max @ VGS = 4.5 V (mΩ) | RDS(on) Max @ VGS = 10 V (mΩ) | Qg Typ @ VGS = 4.5 V (nC) | Qg Typ @ VGS = 10 V (nC) | Qgd Typ @ VGS = 4.5 V (nC) | Qrr Typ (nC) | Ciss Typ (pF) | Coss Typ (pF) | Crss Typ (pF) |
|---|
| NVMD4N03R2G | N-Channel | Dual | 30 | 20 | 3 | 4 | 2 | | 80 | 60 | | 8 | | 0.008 | 285 | 95 | 35 |
