NVMFD5852NL: Power MOSFET 40V, 44A, 6.9 mOhm, Dual N-Channel, SO8-FL, Logic Level.
Automotive Power MOSFET in a 5x6mm flat lead package designed for compact and efficient designs and including high thermal performance. Wettable Flank Option available for Enhanced Optical Inspection. AEC-Q101 Qualified MOSFET and PPAP capable suitable for automotive applications.
特性- Low RDS(on)
- Low Capacitance
- Low Gate Charge
- AEC-Q101 qualified
- Devices are Pb free, Halogen free and BFR free
- 5 x 6 x 1 mm Dual SO-8FL package
| 优势- Reduced Conduction Losses
- Reduced input losses
- Reduced swtiching losses
- Suitable for automotive applications
- RoHS compliant
- Smaller PC boards and modules
|
应用- Motor Control
- High Side / Low Side switch
| 终端产品- Chassis Control Module
- Engine Control Module
- Body Control Module
|
应用注释 (1)
数据表 (1)
仿真模型 (4)
封装图纸 (1)
产品订购型号
| 产品 | 状况 | Compliance | 封装 | MSL* | 容器 | 预算价格 (1千个数量的单价） |
|---|
| NVMFD5852NLT1G | Active | AEC Qualified
PPAP Capable
Pb-free
Halide free | SO-8FL Dual / DFN-8 | 506BT | 1 | Tape and Reel | 1500 | $0.5865 |
| NVMFD5852NLWFT1G | Active | AEC Qualified
PPAP Capable
Pb-free
Halide free | SO-8FL Dual / DFN-8 | 506BT | 1 | Tape and Reel | 1500 | $0.6038 |
订购产品技术参数
| Product | Channel Polarity | Configuration | V(BR)DSS Min (V) | VGS Max (V) | VGS(th) Max (V) | ID Max (A) | PD Max (W) | RDS(on) Max @ VGS = 2.5 V (mΩ) | RDS(on) Max @ VGS = 4.5 V (mΩ) | RDS(on) Max @ VGS = 10 V (mΩ) | Qg Typ @ VGS = 4.5 V (nC) | Qg Typ @ VGS = 10 V (nC) | Qgd Typ @ VGS = 4.5 V (nC) | Qrr Typ (nC) | Ciss Typ (pF) | Coss Typ (pF) | Crss Typ (pF) |
|---|
| NVMFD5852NLT1G | N-Channel | Dual | 40 | 20 | 2.4 | 40 | 27 | | 12 | 6.9 | 20 | 36 | 10.9 | 15.2 | 1800 | 240 | 180 |
| NVMFD5852NLWFT1G | N-Channel | Dual | 40 | 20 | 2.4 | 40 | 27 | | 12 | 6.9 | 20 | 36 | 10.9 | 15.2 | 1800 | 240 | 180 |
