RB521: Schottky Barrier Diode, 30 V

The Schottky diode is designed for high speed switching applications, circuit protection and voltage clamping. Extremely low forward voltage reduces conduction loss. The miniature surface mount package is excellent for hand held and portable applications where space is limited.

特性
  • Extremely Fast Switching Speed
  • Extremely Low Forward Voltage 0.5 V (max) @ IF = 200 mA
  • Low Reverse Current
  • NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC Qualified and PPAP Capable
  • These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant
封装
仿真模型 (4)
Document TitleDocument ID/SizeRevisionRevision Date
LIB Model For RB521S30T1RB521S30T1.LIB (0.0kB)0
SIN Model For RB521S30T1RB521S30T1.SIN (0.0kB)0
SP2 Model For RB521S30T1RB521S30T1.SP2 (0.0kB)0
SP3 Model For RB521S30T1RB521S30T1.SP3 (0.0kB)0
封装图纸 (1)
Document TitleDocument ID/SizeRevision
SOD-523 2 LEAD502-01 (54.8kB)E
数据表 (1)
Document TitleDocument ID/SizeRevisionRevision Date
Schottky Barrier Diode, 30 VRB521S30T1/D (48kB)9
产品订购型号
产品状况Compliance封装MSL*容器预算价格 (1千个数量的单价）
NSVRB521S30T1GActiveAEC Qualified PPAP Capable Pb-free Halide freeSOD-523-2502-011Tape and Reel3000$0.0469
RB521S30T1GActiveAEC Qualified Pb-free Halide freeSOD-523-2502-011Tape and Reel3000$0.0387
RB521S30T5GActiveAEC Qualified Pb-free Halide freeSOD-523-2502-011Tape and Reel8000$0.0387
订购产品技术参数
ProductConfigurationVRRM Min (V)VF Max (V)IRM Max (µA)IO(rec) Max (A)IFSM Max (A)trr Max (ns)Cj Max (pF)
NSVRB521S30T1GSingle300.5300.21--
RB521S30T1GSingle300.5300.21--
RB521S30T5GSingle300.5300.21--
Schottky Barrier Diode, 30 V (48kB) RB521
LIB Model For RB521S30T1 RB521
SIN Model For RB521S30T1 RB521
SP2 Model For RB521S30T1 RB521
SP3 Model For RB521S30T1 RB521
SOD-523 2 LEAD ESD8351
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