SCH1330: Power MOSFET, -20V, 241mΩ, -1.5A, Single P-Channel
This low-profile high-power MOSFET is produced using ON Semiconductor’s trench technology, which is specifically designed to minimize gate charge and ultra low on resistance. This device is suitable for applications with low gate charge driving or ultra low on resistance requirements.
特性- Low On-Resistance
- High Speed Switching
- 1.8V drive
- ESD Diode-Protected Gate
- Pb-Free, Halogen Free and RoHS compliance
- Ultra small package SCH6 (1.6mm×1.6mm×0.56mmt)
| 优势- Improves Efficiency by Reducing Conduction Losses, Reduces Heat Dissipation
- Reduces Dynamic Power Losses
- Drive at Low Voltage
- ESD Resistance
- Environmental Consideration
- Board Space Saving
|
应用- Battery Switch
- Load Switch
| 终端产品- DSC, Cell Phone, Remote Controller
|
仿真模型 (1)
封装图纸 (1)
数据表 (1)
产品订购型号
| 产品 | 状况 | Compliance | 封装 | MSL* | 容器 | 预算价格 (1千个数量的单价） |
|---|
| SCH1330-TL-H | Active, Not Rec | Pb-free
Halide free | SOT-563 / SCH-6 | 463AB | 1 | Tape and Reel | 5000 | $0.104 |
| SCH1330-TL-W | Active | Pb-free
Halide free | SOT-563 / SCH-6 | 463AB | 1 | Tape and Reel | 5000 | $0.0933 |
订购产品技术参数
| Product | Channel Polarity | Configuration | V(BR)DSS Min (V) | VGS Max (V) | VGS(th) Max (V) | ID Max (A) | PD Max (W) | RDS(on) Max @ VGS = 2.5 V (mΩ) | RDS(on) Max @ VGS = 4.5 V (mΩ) | RDS(on) Max @ VGS = 10 V (mΩ) | Qg Typ @ VGS = 4.5 V (nC) | Qg Typ @ VGS = 10 V (nC) | Qgd Typ @ VGS = 4.5 V (nC) | Qrr Typ (nC) | Ciss Typ (pF) | Coss Typ (pF) | Crss Typ (pF) |
|---|
| SCH1330-TL-W | P-Channel | Single | -20 | 10 | -1.4 | -1.5 | 1 | 385 | 241 | | 1.7 | | 0.47 | | 120 | 26 | 20 |
