SCH1430: Power MOSFET, 20V, 125mΩ, 2A, Single N-Channel

This low-profile high-power MOSFET is produced using ON Semiconductor’s trench technology, which is specifically designed to minimize gate charge and ultra low on resistance. This device is suitable for applications with low gate charge driving or ultra low on resistance requirements.

特性
  • Low On-Resistance
  • 1.8V drive
  • ESD Diode-Protected Gate
  • Pb-Free, Halogen Free and RoHS compliance
  • Ultra small package SCH6 (1.6mm×1.6mm×0.56mmt)
优势
  • Improves Efficiency by Reducing Conduction Losses, Reduces Heat Dissipation
  • Drive at Low Voltage
  • ESD Resistance
  • Environmental Consideration
  • Board Space Saving
应用
  • Load Switch
终端产品
  • Air Conditioner
数据表 (1)
Document TitleDocument ID/SizeRevisionRevision Date
Power MOSFET, 20V, 125mOhm, 2A, Single N-ChannelSCH1430/D (668kB)2Aug, 2015
封装图纸 (1)
Document TitleDocument ID/SizeRevision
SOT-563 / SCH6463AB (49.2kB)O
产品订购型号
产品状况Compliance封装MSL*容器预算价格 (1千个数量的单价)
SCH1430-TL-HActive, Not RecPb-free Halide freeSOT-563 / SCH-6463AB1Tape and Reel5000$0.1133
SCH1430-TL-WActivePb-free Halide freeSOT-563 / SCH-6463AB1Tape and Reel5000$0.1
订购产品技术参数
ProductChannel PolarityConfigurationV(BR)DSS Min (V)VGS Max (V)VGS(th) Max (V)ID Max (A)PD Max (W)RDS(on) Max @ VGS = 2.5 V (mΩ)RDS(on) Max @ VGS = 4.5 V (mΩ)RDS(on) Max @ VGS = 10 V (mΩ)Qg Typ @ VGS = 4.5 V (nC)Qg Typ @ VGS = 10 V (nC)Qgd Typ @ VGS = 4.5 V (nC)Qrr Typ (nC)Ciss Typ (pF)Coss Typ (pF)Crss Typ (pF)
SCH1430-TL-WN-ChannelSingle20121.320.81901251.80.551282821
Power MOSFET, 20V, 125mOhm, 2A, Single N-Channel (668kB) SCH1430
SOT-563 / SCH6 SCH2825