This low-profile high-power MOSFET is produced using ON Semiconductor’s trench technology, which is specifically designed to minimize gate charge and ultra low on resistance. This device is suitable for applications with low gate charge driving or ultra low on resistance requirements.
特性
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应用
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| Document Title | Document ID/Size | Revision | Revision Date |
|---|---|---|---|
| SCH1435 SPICE PARAMETER | SCH1435-SPICE/D (21kB) | 0 | Jun, 2014 |
| Document Title | Document ID/Size | Revision |
|---|---|---|
| SOT-563 / SCH6 | 463AB (49.2kB) | O |
| Document Title | Document ID/Size | Revision | Revision Date |
|---|---|---|---|
| Power MOSFET, 30V, 89mOhm, 3A, Single N-Channel | SCH1435/D (657kB) | 2 | Aug, 2015 |
| 产品 | 状况 | Compliance | 封装 | MSL* | 容器 | 预算价格 (1千个数量的单价） | ||
|---|---|---|---|---|---|---|---|---|
| SCH1435-TL-H | Active, Not Rec | Pb-free Halide free | SOT-563 / SCH-6 | 463AB | 1 | Tape and Reel | 5000 | $0.12 |
| SCH1435-TL-W | Active | Pb-free Halide free | SOT-563 / SCH-6 | 463AB | 1 | Tape and Reel | 5000 | $0.1133 |
| Product | Channel Polarity | Configuration | V(BR)DSS Min (V) | VGS Max (V) | VGS(th) Max (V) | ID Max (A) | PD Max (W) | RDS(on) Max @ VGS = 2.5 V (mΩ) | RDS(on) Max @ VGS = 4.5 V (mΩ) | RDS(on) Max @ VGS = 10 V (mΩ) | Qg Typ @ VGS = 4.5 V (nC) | Qg Typ @ VGS = 10 V (nC) | Qgd Typ @ VGS = 4.5 V (nC) | Qrr Typ (nC) | Ciss Typ (pF) | Coss Typ (pF) | Crss Typ (pF) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| SCH1435-TL-W | N-Channel | Single | 30 | 12 | 1.3 | 3 | 0.8 | 126 | 89 | 3.5 | 0.93 | 265 | 35 | 28 |
