TIP33C: High Power NPN Bipolar Power Transistor

The Bipolar Power Transistor is designed for general-purpose power amplifier and switching applications

特性
  • 10 A Collector Current
  • Low Leakage Current - ICEO = 0.7 mA @ 60 V
  • Excellent dc Gain - hFE = 40 Typ @ 3.0 A
  • High Current Gain Bandwidth Product - hfe = 3.0 min @ IC = 0.5 A, f = 1.0 MHz
  • Pb-Free Packages are Available
封装
仿真模型 (4)
Document TitleDocument ID/SizeRevisionRevision Date
PSpice ModelTIP33C.LIB (0.0kB)0
Saber ModelTIP33C.SIN (1.0kB)0
Spice2 ModelTIP33C.SP2 (0.0kB)0
Spice3 ModelTIP33C.SP3 (0.0kB)0
封装图纸 (2)
Document TitleDocument ID/SizeRevision
SOT-93 (T0-218) 4 LEAD340D-02 (67.7kB)E
TO-247340L (57.4kB)F
数据表 (1)
Document TitleDocument ID/SizeRevisionRevision Date
Complementary Silicon High-Power TransistorsTIP33C/D (104.0kB)4
产品订购型号
产品状况Compliance封装MSL*容器预算价格 (1千个数量的单价)
TIP33CGActivePb-freeTO-247联系BDTICNATube30$0.8573
TIP33CLast ShipmentsSOT-93-3 / TO-218-3340D-02NATube30
订购产品技术参数
ProductPolarityTypeVCE(sat) Max (V)IC Continuous (A)V(BR)CEO Min (V)hFE MinhFE MaxfT Min (MHz)PTM Max (W)
TIP33CGNPN1010020100380
Complementary Silicon High-Power Transistors (104.0kB) TIP33C
PSpice Model TIP33C
Saber Model TIP33C
Spice2 Model TIP33C
Spice3 Model TIP33C
TO-247 TIP36C
SOT-93 (T0-218) 4 LEAD TIP36C