首页 > SAMSUNG 三星 > SRAM 存储器 > QDR I/II/II+

K7R160982B

• Part number 型号：K7R160982B
• Density 存储容量：18M bit
• Organization 结构：2Mx9
• VDD 正电源输入：1.8(V)
• Access Time-tCD 存取时间：0.45,0.45,0.50(ns)
• Cycle time 周期时间：250,200,167(MHz)
• I/O Voltage 输入输出电压：1.5,1.8(V)
• Package 封装形式：165FBGA

K7R160982B 订购型号：

订购型号	Density	Organization	VDD(V)	Access Time-tCD(ns)	Cycle time(MHz)	I/O Voltage(V)	Package
K7R160982B-EC16	16M	2Mx9	1.8V	0.45,0.45,0.50	250,200,167	1.5,1.8	165FBGA
K7R160982B-EC160	16M	2Mx9	1.8V	0.45,0.45,0.50	250,200,167	1.5,1.8	165FBGA
K7R160982B-EC20	16M	2Mx9	1.8V	0.45,0.45,0.50	250,200,167	1.5,1.8	165FBGA
K7R160982B-EC200	16M	2Mx9	1.8V	0.45,0.45,0.50	250,200,167	1.5,1.8	165FBGA
K7R160982B-EC25	16M	2Mx9	1.8V	0.45,0.45,0.50	250,200,167	1.5,1.8	165FBGA
K7R160982B-EC250	16M	2Mx9	1.8V	0.45,0.45,0.50	250,200,167	1.5,1.8	165FBGA
K7R160982B-FC16	16M	2Mx9	1.8V	0.45,0.45,0.50	250,200,167	1.5,1.8	165FBGA
K7R160982B-FC160	16M	2Mx9	1.8V	0.45,0.45,0.50	250,200,167	1.5,1.8	165FBGA
K7R160982B-FC20	16M	2Mx9	1.8V	0.45,0.45,0.50	250,200,167	1.5,1.8	165FBGA
K7R160982B-FC200	16M	2Mx9	1.8V	0.45,0.45,0.50	250,200,167	1.5,1.8	165FBGA
K7R160982B-FC25	16M	2Mx9	1.8V	0.45,0.45,0.50	250,200,167	1.5,1.8	165FBGA
K7R160982B-FC250	16M	2Mx9	1.8V	0.45,0.45,0.50	250,200,167	1.5,1.8	165FBGA

K7R160982B 技术支持与电子电路设计开发资源下载:

• K7R160982B 数据手册DataSheet下载.pdf