STPSC4H065 650 V power Schottky silicon carbide diode

The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide bandgap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature.

Especially suited for use in PFC applications, this ST SiC diode will boost the performance in hard switching conditions. Its high forward surge capability ensures a good robustness during transient phases

技术特性

No or negligible reverse recovery
Switching behavior independent of temperature
High forward surge capability

管脚定义图

STPSC4H065 功能框图

STPSC4H065 订购信息

订购型号	产品状态	美金价格	数量	封装	包装形式	温度范围	材料声明
STPSC4H065B-TR	Active		1000	DPAK	Tape And Reel		STPSC4H065B-TR
STPSC4H065D	Active		1000	TO-220AC	Tube		STPSC4H065D

DATASHEET

描述	版本	大小
STPSC4H065 :DS9222: 650 V power Schottky silicon carbide diode	2	104KB