VNB35NV04-E OMNIFET II :FULLY AUTOPROTECTED POWER MOSFET

The VNB35NV04-E, VNP35NV04-E and VNV35NV04-E are monolithic devices designed in STMicroelectronics®VIPower®M0-3 Technology, intended for replacement of standard Power MOSFETs from DC up to 25 kHz applications.

Built in thermal shutdown, linear current limitation and overvoltage clamp protect the chip in harsh environments. Fault feedback can be detected by monitoring the voltage at the input pin

技术特性
  • Linear current limitation
  • Thermal shutdown
  • Short circuit protection
  • Integrated clamp
  • Low current drawn from input pin
  • Diagnostic feedback through input pin
  • ESD protection
  • Direct access to the gate of the Power MOSFET (analog driving)
  • Compatible with standard Power MOSFET
管脚定义图

VNB35NV04-E 功能框图

应用领域
  • All types of resistive, inductive and capacitive loads
  • Suitable as LED driver
VNB35NV04-E 订购信息
订购型号 产品状态 美金价格 数量 封装 包装形式 温度范围 材料声明
VNB35NV04TR-E Active   1000 D²PAK Tape And Reel   VNB35NV04TR-E
VNB35NV04-E Active   1000 D²PAK Tube   VNB35NV04-E
DATASHEET
描述 版本 大小
VNB35NV04-E :DS9212: OMNIFET II fully autoprotected Power MOSFET 1 524KB
Products 产品服务
Manufacturers 生产厂家
Sales 联系销售