CD54HC367 具有反向三态输出的高速 CMOS 逻辑六路缓冲器/线路驱动器
CD54HC367 描述
The ’HC367, ’HCT367, ’HC368, and CD74HCT368 silicon gate CMOS three-state buffers are general purpose high-speed non-inverting and inverting buffers. They have high drive current outputs which enable high speed operation even when driving large bus capacitances. These circuits possess the low power dissipation of CMOS circuitry, yet have speeds comparable to low power Schottky TTL circuits. Both circuits are capable of driving up to 15 low power Schottky inputs.
The ’HC367 and ’HCT367 are non-inverting buffers, whereas the ’HC368 and CD74HCT368 are inverting buffers. These devices have two output enables, one enable (OE1) controls 4 gates and the other (OE2) controls the remaining 2 gates
|
CD54HC367 |
| Voltage Nodes(V) |
6, 5, 2 |
| Vcc range(V) |
2.0 to 6.0 |
| Input Level |
CMOS |
| Output Level |
CMOS |
| No. of Outputs |
6 |
| Output Drive(mA) |
-6/6 |
| tpd max(ns) |
26 |
| Static Current |
0.08 |
| Logic |
Inv |
| Technology Family |
HC |
| Rating |
Catalog |
CD54HC367 特性
- Buffered Inputs
- High Current Bus Driver Outputs
- Two Independent Three-State Enable Controls
- Typical Propagation Delay tPLH,tPHL = 8ns at VCC =5V, CL = 15pF, TA = 25°C
- Fanout (Over Temperature Range)
- Standard Outputs...10 LSTTL Loads
- Bus Driver Outputs...15 LSTTL Loads
- Wide Operating Temperature Range... –55°C to 125°C
- Balanced Propagation Delay and Transition Times
- Significant Power Reduction Compared to LSTTL Logic ICs
- HC Types
- 2V to 6V Operation
- High Noise Immunity: NIL = 30%, NIH = 30% of VCC at VCC = 5V
- HCT Types
- 4.5V to 5.5V Operation
- Direct LSTTL Input Logic Compatibility, VIL = 0.8V (Max), VIH = 2V (Min)
- CMOS Input Compatibility, I1
1µA at VOL, VOH
CD54HC367 芯片订购指南
| 器件 |
状态 |
温度 |
价格（美元） |
封装 | 引脚 |
封装数量 | 封装载体 |
丝印标记 |
| CD54HC367E |
ACTIVE |
-55 to 125 |
0.39 | 1ku |
PDIP (N) | 16 |
25 | TUBE |
|
| CD54HC367EE4 |
ACTIVE |
-55 to 125 |
0.39 | 1ku |
PDIP (N) | 16 |
25 | TUBE |
|
| CD54HC367M |
ACTIVE |
-55 to 125 |
0.42 | 1ku |
SOIC (D) | 16 |
40 | TUBE |
|
| CD54HC367M96 |
ACTIVE |
-55 to 125 |
0.35 | 1ku |
SOIC (D) | 16 |
2500 | LARGE T&R |
|
| CD54HC367M96E4 |
ACTIVE |
-55 to 125 |
0.35 | 1ku |
SOIC (D) | 16 |
2500 | LARGE T&R |
|
| CD54HC367M96G4 |
ACTIVE |
-55 to 125 |
0.35 | 1ku |
SOIC (D) | 16 |
2500 | LARGE T&R |
|
| CD54HC367ME4 |
ACTIVE |
-55 to 125 |
0.42 | 1ku |
SOIC (D) | 16 |
40 | TUBE |
|
| CD54HC367MG4 |
ACTIVE |
-55 to 125 |
0.42 | 1ku |
SOIC (D) | 16 |
40 | TUBE |
|
CD54HC367 质量与无铅数据
| 器件 |
环保计划* |
铅/焊球涂层 |
MSL 等级/回流焊峰 |
环保信息与无铅 (Pb-free) |
DPPM / MTBF / FIT 率 |
| CD54HC367E |
Pb-Free (RoHS) |
CU NIPDAU |
N/A for Pkg Type |
CD54HC367E |
CD54HC367E |
| CD54HC367EE4 |
Pb-Free (RoHS) |
CU NIPDAU |
N/A for Pkg Type |
CD54HC367EE4 |
CD54HC367EE4 |
| CD54HC367M |
Green (RoHS & no Sb/Br) |
CU NIPDAU |
Level-1-260C-UNLIM |
CD54HC367M |
CD54HC367M |
| CD54HC367M96 |
Green (RoHS & no Sb/Br) |
CU NIPDAU |
Level-1-260C-UNLIM |
CD54HC367M96 |
CD54HC367M96 |
| CD54HC367M96E4 |
Green (RoHS & no Sb/Br) |
CU NIPDAU |
Level-1-260C-UNLIM |
CD54HC367M96E4 |
CD54HC367M96E4 |
| CD54HC367M96G4 |
Green (RoHS & no Sb/Br) |
CU NIPDAU |
Level-1-260C-UNLIM |
CD54HC367M96G4 |
CD54HC367M96G4 |
| CD54HC367ME4 |
Green (RoHS & no Sb/Br) |
CU NIPDAU |
Level-1-260C-UNLIM |
CD54HC367ME4 |
CD54HC367ME4 |
| CD54HC367MG4 |
Green (RoHS & no Sb/Br) |
CU NIPDAU |
Level-1-260C-UNLIM |
CD54HC367MG4 |
CD54HC367MG4 |
CD54HC367 应用技术支持与电子电路设计开发资源下载
- CD54HC367 数据资料 dataSheet 下载.PDF
- TI 德州仪器缓冲器、驱动器/收发器产品选型与价格 . xls
- CMOS 非缓冲反向器在振荡器电路中的使用 (PDF 951 KB)
- Semiconductor Packing Methodology (PDF 3005 KB)
- 逻辑产品选择指南 2006/2007 （修订版 Z）(4462KB)
- 标准线性和逻辑产品 5 分钟指南 (786KB)
- 了解和解释标准逻辑数据表
- LOGIC Pocket Data Book (PDF 6001 KB)
- HiRel Unitrode Power Management Brochure (PDF 206 KB)
- Logic Cross-Reference (PDF 2938 KB)
