SN74ABT541B 具有三态输出的八路缓冲器/驱动器
SN74ABT541B 描述
The SN54ABT541 and SN74ABT541B octal buffers and line drivers are ideal for driving bus lines or buffering memory address registers. The devices feature inputs and outputs on opposite sides of the package to facilitate printed circuit board layout.
The 3-state control gate is a two-input AND gate with active-low inputs so that if either output-enable (OE1 or OE2) input is high, all eight outputs are in the high-impedance state.
When VCC is between 0 and 2.1 V, the device is in the high-impedance state during power up or power down. However, to ensure the high-impedance state above 2.1 V, OE should be tied to VCC through a pullup resistor; the minimum value of the resistor is determined by the current-sinking capability of the driver.
The SN54ABT541 is characterized for operation over the full military temperature range of -55°C to 125°C. The SN74ABT541B is characterized for operation from -40°C to 85°C
| SN74ABT541B | |
| Voltage Nodes(V) | 5 |
| Vcc range(V) | 4.5 to 5.5 |
| Logic | True |
| Input Level | TTL |
| Output Level | TTL |
| Output Drive(mA) | -32/64 |
| No. of Outputs | 8 |
| tpd max(ns) | 3.9 |
| Static Current | 15.12 |
| Rating | Catalog |
| Technology Family | ABT |
SN74ABT541B 特性
- State-of-the-Art EPIC-IIB™ BiCMOS DesignSignificantly Reduces Power Dissipation
- Latch-Up Performance Exceeds 500 mA Per JEDEC Standard JESD-17
- Typical VOLP (Output Ground Bounce) < 1 V at VCC = 5 V, TA = 25°C
- High-Impedance State During Power Up and Power Down
- High-Drive Outputs (-32-mA IOH, 64-mA IOL)
- Package Options Include Plastic Small-Outline (DW), Shrink Small-Outline (DB), and Thin Shrink Small-Outline (PW) Packages, Ceramic Chip Carriers (FK), Ceramic Flat (W) Package, and Plastic (N) and Ceramic (J) DIPs
SN74ABT541B 芯片订购指南
| 器件 | 状态 | 温度 | 价格（美元） | 封装 | 引脚 | 封装数量 | 封装载体 | 丝印标记 |
| SN74ABT541BDW | ACTIVE | -40 to 85 | 0.48 | 1ku | SOIC (DW) | 20 | 25 | TUBE | ABT541B |
| SN74ABT541BDWE4 | ACTIVE | -40 to 85 | 0.48 | 1ku | SOIC (DW) | 20 | 25 | TUBE | ABT541B |
| SN74ABT541BDWG4 | ACTIVE | -40 to 85 | 0.48 | 1ku | SOIC (DW) | 20 | 25 | TUBE | ABT541B |
SN74ABT541B 质量与无铅数据
| 器件 | 环保计划* | 铅/焊球涂层 | MSL 等级/回流焊峰 | 环保信息与无铅 (Pb-free) | DPPM / MTBF / FIT 率 |
| SN74ABT541BDW | Green (RoHS & no Sb/Br) | CU NIPDAU | Level-1-260C-UNLIM | SN74ABT541BDW | SN74ABT541BDW |
| SN74ABT541BDWE4 | Green (RoHS & no Sb/Br) | CU NIPDAU | Level-1-260C-UNLIM | SN74ABT541BDWE4 | SN74ABT541BDWE4 |
| SN74ABT541BDWG4 | Green (RoHS & no Sb/Br) | CU NIPDAU | Level-1-260C-UNLIM | SN74ABT541BDWG4 | SN74ABT541BDWG4 |
SN74ABT541B 应用技术支持与电子电路设计开发资源下载
- SN74ABT541B 数据资料 dataSheet 下载.PDF
- TI 德州仪器缓冲器、驱动器/收发器产品选型与价格 . xls
- CMOS 非缓冲反向器在振荡器电路中的使用 (PDF 951 KB)
- Semiconductor Packing Methodology (PDF 3005 KB)
- 逻辑产品选择指南 2006/2007 （修订版 Z）(4462KB)
- 标准线性和逻辑产品 5 分钟指南 (786KB)
- 了解和解释标准逻辑数据表
- LOGIC Pocket Data Book (PDF 6001 KB)
- HiRel Unitrode Power Management Brochure (PDF 206 KB)
- Logic Cross-Reference (PDF 2938 KB)
