TL5209 单路输出 LDO、500mA、可调节 （1.3 至 6.5V）低噪声
|
TL5209 |
| Iout(Max)(A) |
0.5 |
| Vdo(Typ)(mV) |
500 |
| Vin(Min)(V) |
2.5 |
| Vin(Max)(V) |
16 |
| Vout(Max)(V) |
6.5 |
| Vout Adj(Max)(V) |
6.75 |
| Accuracy(%) |
2 |
| Output Capacitor(uF) |
2.2 |
| Output Capacitor Type |
Tantalum |
| Pin/Package |
8SOIC |
| Rating |
Catalog |
| Regulated Outputs(#) |
1 |
TL5209 描述
The TL5209 is an efficient PNP low-dropout (LDO) regulator that is well suited for portable applications. It has significantly lower quiescent current than previously was available from traditional PNP regulators and allows for a shutdown current of only 0.05 µA (typical). The TL5209 also has very good dropout voltage characteristics, requiring a maximum dropout of 60 mV at light loads and 500 mV at full load. In addition, the LDO also has 1% output voltage accuracy and extremely tight line and load regulation that is hard to match by its CMOS counterparts.
For noise-sensitive applications, the TL5209 allows for low-noise capability via an external bypass capacitor connected to the BYP pin, which reduces the output noise of the regulator. Other features include current limiting, thermal shutdown, reverse-battery protection, and low temperature coefficient.
The TL5209 is available with adjustable output. Offered in an SOIC-8 surface-mount package, the TL5209 is characterized for operation over the virtual junction temperature ranges of -40°C to 125°C
TL5209 特性
- Adjustable Output Voltage
- 1%/2% Accuracy (25°C/Full Range)
- 500-mV (Max) Dropout at Full Load of 500 mA
- Extremely Tight Regulation Over Temperature Range
- 0.1%/V (Max) Line Regulation
- 0.7% (Max) Load Regulation
- Ultra-Low Noise Capability (300 nV/
Hz Typ)
- Shutdown Current of 3 µA (Max)
- Low Temperature Coefficient
- Current Limiting and Thermal Protection
- Stable With Minimum Load of 1 mA
- Reverse-Battery Protection
- Applications
- Portable Applications (PDAs, Laptops, Cell Phones)
- Consumer Electronics
- Post-Regulation for SMPS
- Available in Convenient SOIC-8 Surface-Mount Package
TL5209 芯片订购指南
| 器件 |
状态 |
温度 (oC) |
价格（美元） |
封装 | 引脚 |
封装数量 | 封装载体 |
丝印标记 |
| TL5209DR |
ACTIVE |
-40 to 125 |
0.39 | 1ku |
SOIC (D) | 8 |
2500 | LARGE T&R |
TL5209 |
| TL5209DRG4 |
ACTIVE |
-40 to 125 |
0.39 | 1ku |
SOIC (D) | 8 |
2500 | LARGE T&R |
TL5209 |
TL5209 质量与无铅数据
| 器件 |
环保计划* |
铅/焊球涂层 |
MSL 等级/回流焊峰 |
环保信息与无铅 (Pb-free) |
DPPM / MTBF / FIT 率 |
| TL5209DR |
Green (RoHS & no Sb/Br) |
CU NIPDAU |
Level-1-260C-UNLIM |
TL5209DR |
TL5209DR |
| TL5209DRG4 |
Green (RoHS & no Sb/Br) |
CU NIPDAU |
Level-1-260C-UNLIM |
TL5209DRG4 |
TL5209DRG4 |
TL5209 应用技术支持与电子电路设计开发资源下载
- TL5209 数据资料 dataSheet 下载.PDF
- TI 德州仪器LDO低压差线性稳压器驱动器选型与价格参考 . xls
- Dual MOSFET Driver (PDF 498 KB)
- 全面认识开关型电源中的BUCK-BOOST功率级 (Rev. A)
(PDF 2206 KB)
- LDO PSRR Measurement Simplified
(PDF 140 KB)
- LDO Noise Demystified
(PDF 782 KB)
- 标准线性产品交叉参考 (Rev. D)
(PDF 1058 KB)
- 模数规格和性能特性术语表 (Rev. A) (PDF 1993 KB)
- 所选封装材料的热学和电学性质 (PDF 645 KB)
- 高速数据转换 (PDF 1967 KB)
