ADG636YRUZ-REEL7:  1pC Charge Injection, 100pA Leakage CMOS Dual SPDT Switch

The ADG636 is a monolithic device, comprising of two independantly selectable CMOS SPDT (Single Pole, Double Throw) switches. Each switch conducts equally well in both directions when on. The ADG636 operates from a dual ±2.7 V to ±5.5 supply, or from a single supply of +2.7 V to +5.5 V.

This switch offers ultra-low charge injection of 1 pC and leakage current of less than 250pA at 85ºC. It offers on-resistance of 85 Ω typ, which is matched to within 6 Ω between channels. The ADG636 also has low power dissipation yet gives high switching speeds. The ADG636 exhibits break-before-make switching action and is available in a 14-lead TSSOP package.

ADG636YRUZ-REEL7 特点
ADG636YRUZ-REEL7 功能框图

ADG636 芯片订购指南
产品型号 产品状态 封装 引脚 温度范围
ADG636YRU 量产 14 ld TSSOP 14 汽车级
ADG636YRU-REEL 量产 14 ld TSSOP 14 汽车级
ADG636YRU-REEL7 量产 14 ld TSSOP 14 汽车级
ADG636YRUZ 量产 14 ld TSSOP 14 汽车级
ADG636YRUZ-REEL 量产 14 ld TSSOP 14 汽车级
ADG636YRUZ-REEL7 量产 14 ld TSSOP 14 汽车级
ADG636YRUZ-REEL7 应用技术支持与电子电路设计开发资源下载
  1. ADG636 数据手册DataSheet下载 . pdf
  2. Analog Devices, Inc.ADI 美国模拟器件公司产品订购手册 .pdf
  3. ADC模数转换器选型指南 . pdf