The ADR293 is a low noise, micropower precision voltage reference that utilizes an XFET® (eXtra implanted junction FET) reference circuit. The XFET architecture offers significant performance improvements over traditional band gap and buried Zener-based references. Improvements include one quarter the voltage noise output of band gap references operating at the same current, very low and ultralinear temperature drift, low thermal hysteresis, and excellent long-term stability.
The ADR293 is a series voltage reference providing stable and accurate output voltage from a 6.0 V supply. Quiescent current is only 15 μA maximum, making this device ideal for battery powered instrumentation. Three electrical grades are available offering initial output accuracy of ±3 mV, ±6 mV, and ±10 mV. Temperature coefficients for the three grades are 8 ppm/°C, 15 ppm/°C, and 25 ppm/°C maximum. Line regulation and load regulation are typically 30 ppm/V and 30 ppm/mA, respectively, maintaining the reference’s overall high performance.
The ADR293 is specified over the extended industrial temperature range of –40°C to +125°C. This device is available in the 8-lead SOIC and 8-lead TSSOP packages.
产品型号 | 产品状态 | 封装 | 引脚 | 温度范围 |
---|---|---|---|---|
ADR293ER | 量产 | 8 ld SOIC | 8 | 工业 |
ADR293ER-REEL | 量产 | 8 ld SOIC | 8 | 工业 |
ADR293ERZ | 量产 | 8 ld SOIC | 8 | 工业 |
ADR293ERZ-REEL | 量产 | 8 ld SOIC | 8 | 工业 |
ADR293GR | 量产 | 8 ld SOIC | 8 | 工业 |
ADR293GR-REEL7 | 量产 | 8 ld SOIC | 8 | 工业 |
ADR293GRU | 量产 | 8 ld TSSOP | 8 | 工业 |
ADR293GRU-REEL | 量产 | 8 ld TSSOP | 8 | 工业 |
ADR293GRU-REEL7 | 量产 | 8 ld TSSOP | 8 | 工业 |
ADR293GRUZ | 量产 | 8 ld TSSOP | 8 | 工业 |
ADR293GRUZ-REEL | 量产 | 8 ld TSSOP | 8 | 工业 |
ADR293GRUZ-REEL7 | 量产 | 8 ld TSSOP | 8 | 工业 |
ADR293GRZ | 量产 | 8 ld SOIC | 8 | 工业 |
ADR293GRZ-REEL7 | 量产 | 8 ld SOIC | 8 | 工业 |