ADR435ARM:  Ultralow Noise XFET® Voltage References with Current Sink and Source Capability

The ADR43x series is a family of XFET voltage references featuring low noise, high accuracy, and low temperature drift performance. Using Analog Devices, Inc., patented temperature drift curvature correction and XFET (eXtra implanted junction FET) technology, voltage change vs. temperature nonlinearity in the ADR43x is minimized.

The XFET references operate at lower current (800 µA) and supply headroom (2 V) than buried Zener references. Buried Zener references require more than 5 V headroom for operations. The ADR43x XFET references are the only low noise solutions for 5 V systems.

The ADR43x family has the capability to source up to 30 mA of output current and sink up to 20 mA. It also comes with a trim terminal to adjust the output voltage over a 0.5% range without compromising performance.

The ADR43x is available in 8-lead MSOP and narrow SOIC packages. All versions are specified over the extended industrial temperature range of −40°C to +125°C.

Applications
ADR435ARM 特点
ADR435ARM 功能框图

ADR435 芯片订购指南
产品型号 产品状态 封装 引脚 温度范围
ADR435AR 量产 8 ld SOIC 8 工业
ADR435AR-REEL7 量产 8 ld SOIC 8 工业
ADR435ARM 量产 8 ld MSOP 8 工业
ADR435ARM-REEL7 量产 8 ld MSOP 8 工业
ADR435ARMZ 量产 8 ld MSOP 8 工业
ADR435ARMZ-REEL7 量产 8 ld MSOP 8 工业
ADR435ARZ 量产 8 ld SOIC 8 工业
ADR435ARZ-REEL7 量产 8 ld SOIC 8 工业
ADR435BR 量产 8 ld SOIC 8 工业
ADR435BR-REEL7 量产 8 ld SOIC 8 工业
ADR435BRZ 量产 8 ld SOIC 8 工业
ADR435BRZ-REEL7 量产 8 ld SOIC 8 工业
ADR435ARM 应用技术支持与电子电路设计开发资源下载
  1. ADR435 数据手册DataSheet 下载 . pdf
  2. ADI 模拟器件公司比较器产品选型指南 . pdf
  3. Analog Devices, Inc. 美国模拟器件公司产品订购手册 .pdf