AT29C040A-90JU 4Mbit,Flash存储器PLCC-32封装
| Density | 4M |
| Organization | 512K x 8 |
| Speed | 90, 120, 150 ns |
| Vcc (V) | 4.5-5.5 |
| Pb-Free Packages | TSOP 32 PLCC 32 |
4M bit (512k x 8), 5-Volt Read and 5-Volt Write Flash
The AT29C040A is a 5-volt only in-system Flash Programmable and Erasable Read Only Memory (PEROM). Its 4 megabits of memory is organized as 524,288 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS EEPROM technology, the device offers access times up to 90 ns, and a low 220 mW power dissipation. When the device is deselected, the CMOS standby current is less than 100 μA. The device endurance is such that any sector can typically be written to in excess of 10,000 times. The programming algorithm is compatible with other devices in Atmel’s 5-volt only Flash family. To allow for simple in-system reprogrammability, the AT29C040A does not require high input voltages for programming. Five-volt-only commands determine the operation of the device. Reading data out of the device is similar to reading from an EPROM. Reprogramming the AT29C040A is performed on a sector basis; 256 bytes of data are loaded into the device and then simultaneously programmed. During a reprogram cycle, the address locations and 256 bytes of data are internally latched, freeing the address and data bus for other operations. Following the initiation of a program cycle, the device will automatically erase the sector and then program the latched data using an internal control timer. The end of a program cycle can be detected by DATA polling of I/O7. Once the end of a program cycle has been detected, a new access for a read or program can begin.
AT29C040A-90JU 特性
- Fast Read Access Time – 90 ns
- 5-volt Only Reprogramming
- Sector Program Operation
– Single Cycle Reprogram (Erase and Program)
– 2048 Sectors (256 Bytes/Sector)
– Internal Address and Data Latches for 256 Bytes - Internal Program Control and Timer
- Hardware and Software Data Protection
- Two 16K Bytes Boot Blocks with Lockout
- Fast Sector Program Cycle Time – 10 ms
- DATA Polling for End of Program Detection
- Low Power Dissipation
– 40 mA Active Current
– 100 μA CMOS Standby Current - Typical Endurance > 10,000 Cycles
- Single 5V ± 10% Supply
- Green (Pb/Halide-free) Packaging Option
AT29C040A-90JU 订购型号
| tACC (ns) |
ICC (mA) | Ordering Code | Package | Operation Range | |
| Active | Standby | ||||
| 90 | 40 | 0.3 | AT29C040A-90JU AT29C040A-90TU |
32J 32T |
Industrial (-40° to 85° C) |
| 120 | 40 | 0.3 | AT29C040A-12JU AT29C040A-12TU |
32J 32T |
|
AT29C040A-90JU 应用技术支持与电子电路设计开发资源下载
- ATMEL 爱特梅尔Flash 存储器AT29C040A 数据手册DataSheet 下载. PDF（PDF 文件格式完整版）
- 并行Flash 产品选型指南（
Excel 文档格式） - ATMEL 爱特梅尔公司全线产品目录. pdf
- AT20C040A Reliability Qualification Report (Qualification, 11 pages, updated 7/06) . pdf
- AT29 Series Software Chip Erase (4 pages, updated 10/98) . pdf
This Application Note describes Software Chip Erase for the AT29 Series Flash family. - Atmel AT29 Flash Memories (8 pages, updated 10/98) . pdf
This Application Note describes Atmel's AT29 Flash Memories. - Programming Atmel's AT29 Flash Family (12 pages, updated 10/98). pdf
This Application Note describes the design benefits of Atmel's AT29 Flash architecture as well as how the device ID feature is used to adjust for varying densities and supply voltages.
