HMC-ALH313 Low Noise Amplifier Chip, 27 - 33 GHz
The HMC-ALH313 is a three stage GaAs MMIC HEMT Low Noise Amplifier die which operates between 27 and 33 GHz. The amplifier provides 20 dB of gain, a 3 dB noise figure and +12 dBm of output power at 1 dB gain compression while requiring only 52 mA from a +2.5V supply voltage. This amplifier die is ideal for use as a LNA or driver amplifier, and may be easily integrated into Multi-Chip-Modules (MCMs) due to its small size (1.30 mm²) .
技术特性
- Noise Figure: 3.0 dB
- Gain: 20 dB
- P1dB Output Power: +12 dBm
- Supply Voltage: +2.5V @ 52 mA
- Die Size: 1.80 x 0.73 x 0.1 mm
订购信息 Ordering Information
应用领域 APPLICATION
- Point-to-Point Radios
- Point-to-Multi-Point Radios
- VSAT
- Test Equipment & Sensors
- Military & Space
|
技术指标
| Freq. (GHz) |
Function |
Gain (dB) |
OIP3 (dBm) |
NF (dB) |
P1dB (dBm) |
Bias Supply |
Package |
| 27 - 33 |
Low Noise |
20 |
- |
3 |
12 |
+2.5V @ 52mA |
Chip |
功能框图 Functional Block Diagram
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