HMC-ALH435 Low Noise Amplifier Chip, 5 - 20 GHz
The HMC-ALH435 is a GaAs MMIC HEMT Low Noise Wideband Amplifier die which operates between 5 and 20 GHz. The amplifier provides 13 dB of gain, 2.2 dB noise figure at 12 GHz and +16 dBm of output power at 1 dB gain compression while requiring only 30 mA from a +5V supply voltage. The HMC-ALH435 amplifier is ideal for integration into Multi-Chip-Modules (MCMs) due to its small size.
技术特性
- Noise Figure: 2.2 dB @ 12 GHz
- Gain: 13 dB @ 14 GHz
- P1dB Output Power:
+16 dBm @ 12 GHz
- Supply Voltage: +5V @ 30 mA
- Die Size: 1.48 x 0.9 x 0.1 mm
订购信息 Ordering Information
应用领域 APPLICATION
- Wideband Communication Systems
- Surveillance Systems
- Point-to-Point Radios
- Point-to-Multi-Point Radios
- Military & Space
- Test Instrumentation
- VSAT
|
技术指标
| Freq. (GHz) |
Function |
Gain (dB) |
OIP3 (dBm) |
NF (dB) |
P1dB (dBm) |
Bias Supply |
Package |
| 5 - 20 |
Low Noise |
13 |
25 |
2.2 |
16 |
+5V @ 30mA |
Chip |
功能框图 Functional Block Diagram
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