HMC-ALH444 Low Noise Amplifier Chip, 1 - 12 GHz
The HMC-ALH444 is a GaAs MMIC HEMT Low Noise Wideband Amplifier die which operates between 1 and 12 GHz. The amplifier provides 17 dB of gain, 1.5 dB noise figure and +19 dBm of output power at 1 dB gain compression while requiring only 55 mA from a +5V supply voltage.
技术特性
- Noise Figure: 1.75 dB @ 10 GHz
- Gain: 17 dB
- P1dB Output Power:
+19 dBm @ 5 GHz
- Supply Voltage: +5V @ 55 mA
- Die Size: 2.64 x 1.64 x 0.1 mm
订购信息 Ordering Information
应用领域 APPLICATION
- Wideband Communication Systems
- Surveillance Systems
- Point-to-Point Radios
- Point-to-Multi-Point Radios
- Military & Space
- Test Instrumentation
- VSAT
|
技术指标
| Freq. (GHz) |
Function |
Gain (dB) |
OIP3 (dBm) |
NF (dB) |
P1dB (dBm) |
Bias Supply |
Package |
| 1 - 12 |
Low Noise |
17 |
28 |
1.5 |
19 |
+5V @ 55mA |
Chip |
功能框图 Functional Block Diagram
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